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Multi Chip Discrete
Publication date: March 2008 SJF00085AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTM86627
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: V
R
= 15 V, I
F
= 700 mA
Low on-resistance: R
on
= 80 mW (V
GS
= –4.0 V)
Low
short-circuit input capacitance (Common source)
: C
iss
= 300 pF
Small package: WSSMini6-F1 (1.6 mm × 1.6 mm × 0.5 mm)
Low drive Voltage: 1.8 V drive
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
FET
Drain-source surrender voltage V
DSS
–20 V
Gate-source surrender voltage V
GSS
±10
V
Drain current I
D
–2.0 A
Peak drain current I
DP
–8.0 A
Channel temperature
T
ch
150
°C
Storage temperature T
stg
–55 to +150
°C
SBD
Reverse voltage V
R
15 V
Forward current (Average) I
F(AV)
700 mA
Junction temperature T
j
125
°C
Storage temperature T
stg
–55 to +125
°C
Overall Total power dissipation
*
P
D
540 mW
Note)
*
: Measuring on ceramic substrate at 40 mm × 38 mm × 0.2 mm
Absolute maximum rating without heat sink for P
D
is 150 mA
Package
Code
WSSMini6-F1
Pin Name
1: Gate 4: Cathode
2: Source 5: Drain
3: Anode 6: Drain
Marking Symbol: PK
Internal Connection
1
(G)
2
(S)
3
(A)
(K)
4
(D)
5
(D)
6