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MTM86627
SJF00085AED 4
This product complies with the RoHS Directive (EU 2002/95/EC).
P
D
T
a
I
D
V
DS
R
DS(on)
V
GS
R
DS(on)
I
D
C
X
V
DS
0
40
80
160120
0
400
200
600
MTM86627_ P
D
-T
a
Drain power dissipation P
D
(mW)
Ambient temperature T
a
(°C)
Single unit
Measuring on ceramic substrate at
40 mm × 38 mm × 0.8 mm
0 − 0.2 − 0.4 −1.0− 0.6 − 0.8
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
MTM86627_ I
D
-V
DS
Drain current I
D
(A)
Drain-source voltage V
DS
(V)
−1.1 V
−1.0 V
− 0.9 V
− 0.8 V
V
GS
= −1.3 V
0
−2 −8−6−4
10
100
1
000
MTM86627_ R
DS(on)
-V
GS
Drain-source ON resistance R
DS(on)
(Ω)
Gate-source voltage V
GS
(V)
I
D
= −1.0 A
0 − 0.5 −1.0 −1.5 −2.0
10
−2
10
−1
1
MTM86627_ R
DS(on)
-I
D
Drain-source ON resistance R
DS(on)
(Ω)
Drain current I
D
(A)
V
GS
= 1.8 V
4.0 V
2.5 V
−50 −15 −20−10
0
100
200
300
400
MTM86627_ C
X
-V
DS
Drain-source voltage V
DS
(V)
Short-circuit input capacitance (Common source)
C
iss
,
Short-circuit output capacitance (Common source)
C
oss
,
Reverse transfer capacitance (Common source) C
rss
(pF)
C
iss
C
oss
C
rss
Characteristics charts of FET
Characteristics charts of SBD
I
F
V
F
I
R
V
R
C
t
V
R
0 0.2 0.60.4
1
10
−1
10
−5
10
−4
10
−3
10
−2
MTM86627_I
F
-V
F
Forward current I
F
(
A
)
Forward voltage V
F
(
V
)
T
a
= 75°C
−25°C
25°C
0 10 20
10
−1
10
10
2
10
3
1
MTM86627_I
R
-V
R
Reverse current I
R
(µ
A
)
Reverse voltage V
R
(V)
T
a
= 75°C
−25°C
25°C
0 2010
0
40
20
60
80
100
MTM86627_C
t
-V
R
Terminal capacitance C
t
(pF)
Reverse voltage V
R
(
V
)
f = 1 MHz
T
a
= 25°C