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MTM86627
2 SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics T
a
= 25°C±3°C
FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
DSS
I
D
= –1.0 mA, V
GS
= 0 –20 V
Drain-source cutoff current
I
DSS
V
DS
= –20 V, V
GS
= 0 –1.0
mA
Gate-source cutoff current
I
GSS
V
GS
= ±8 V, V
DS
= 0
±10 mA
Gate threshold voltage V
TH
I
D
= –1.0 mA, V
DS
= –10 V – 0.4 – 0.75 –1.1 V
Drain-source ON resistance
*
1
R
DS(on)
I
D
= –1.0 A, V
GS
= –4.0 V 80 120
mW
I
D
= –1.0 A, V
GS
= –2.5 V 100 170
I
D
= – 0.5 A, V
GS
= –1.8 V 140 230
Forward transfer admittance
*
1
Y
fs
I
D
= –1.0 A, V
DS
= –10 V, f = 1 MHz 3.0 S
Short-circuit input capacitance (Common source)
C
iss
V
DS
= –10 V, V
GS
= 0, f = 1 MHz
300 pF
Short-circuit output capacitance (Common source)
C
oss
30 pF
Reverse transfer capacitance (Common source)
C
rss
35 pF
Turn-on delay time
*
2
t
d(on)
V
DD
= –10 V, V
GS
= 0 V to –4 V, I
D
= –1 A
6 ns
Rise time
*
2
t
r
8 ns
Turn-off delay time
*
2
t
d(off)
V
DD
= –10 V, V
GS
= –4 V to 0 V, I
D
= –1 A
57 ns
Fall time
*
2
t
f
55 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: t
on
, t
off
measurement circuit
V
CC
= −10 V
P
W
= 10 µs
Duty Cycle ≤ 1%
I
D
= −1.0 A
R
L
= 10 Ω
V
OUT
V
IN
D
G
S
V
IN
50 Ω
t
d(on)
t
d(off)
0 V
−4 V
V
IN
V
OUT
10%
90%
90%
10%
t
r
t
f
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 500 mA 0.42 V
I
F
= 700 mA 0.45 V
Reverse current I
R
V
R
= 6 V 90
mA
V
R
= 15 V 250
mA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.