Panasonic UP05C8GG Network Card User Manual


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UP05C8GG
2 SJJ00400BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics T
a
= 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 100 mA, I
E
= 0 30 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 mA, I
C
= 0 3 V
Base-emitter voltage V
BE
V
CE
= 10 V, I
C
= 2 mA 720 mV
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 25 250
Transition frequency
*
f
T
V
CB
= 10 V, I
E
= -15 mA, f = 200 MHz 800 1
200 MHz
Power gain PG V
CB
= 10 V, I
E
= -1 mA, f = 100 MHz 20 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*
: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
Pinchi off current I
P
V
DS
= 10 V, V
G
= 0 3.5 5.5 mA
Output impedance Z
O
V
DS
= 10 V, V
G
= 0 0.05 MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P
T
T
a
Common characteristics chart
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation P
T
(
mW
)
Ambient temperature T
a
(
°C
)
UN05C8B_P
T
-T
a
I
C
V
CE
I
C
I
B
I
B
V
BE
Characteristics charts of Tr
0 42 8 106 12
0
35
30
25
40
5
20
15
10
Collector current I
C
(
mA
)
Collector-emitter voltage V
CE
(
V
)
UP05C8G_I
C
-V
CE
T
a
= 25°C
I
B
= 300 µA
200 µA
150 µA
100 µA
50 µA
250 µA
0 0.4 0.60.2 1.00.8 1.2
0
50
40
60
10
30
20
Collector current I
C
(
mA
)
Base current I
B
(
mA
)
UP05C8G_I
C
-I
B
V
CE
= 10 V
0.40.20.1 0.3 0.5 0.6 0.7 0.8 0.9
0
0
0.7
0.6
0.8
0.2
0.1
0.3
0.5
0.4
Base current I
B
(
mA
)
Base-emitter voltage V
BE
(
V
)
UP05C8G_I
B
-V
BE
V
CE
= 10 V
T
a
= 25°C
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