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2002 Jan 11 3
Philips Semiconductors Product specification
Quadruple ESD transient voltage suppressor BZA800AL series
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient all diodes loaded 410 K/W
R
th j-s
thermal resistance from junction to solder point;
note 1
one diode loaded 200 K/W
all diodes loaded 185 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
= 200 mA −−1.3 V
I
R
reverse current
BZA856AL V
R
=3V −−1 000 nA
BZA862AL V
R
=4V −−500 nA
BZA868AL V
R
= 4.3 V −−100 nA
V
Z
working voltage I
Z
=1mA
BZA856AL 5.32 5.6 5.88 V
BZA862AL 5.89 6.2 6.51 V
BZA868AL 6.46 6.8 7.14 V
r
dif
differential resistance I
Z
=1mA
BZA856AL −−400 Ω
BZA862AL −−300 Ω
BZA868AL −−200 Ω
S
Z
temperature coefficient I
Z
=1mA
BZA856AL − 0.3 − mV/K
BZA862AL − 1.6 − mV/K
BZA868AL − 2.2 − mV/K
C
d
diode capacitance f = 1 MHz; V
R
=0
BZA856AL −−125 pF
BZA862AL −−105 pF
BZA868AL −−90 pF
I
ZSM
non-repetitive peak reverse current t
p
= 1 ms; T
amb
=25°C
BZA856AL −−2.2 A
BZA862AL −−2.1 A
BZA868AL −−2A