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2002 Jan 11 4
Philips Semiconductors Product specification
Quadruple ESD transient voltage suppressor BZA800AL series
handbook, halfpage
10
1
10
−1
MLD790
10
−2
10
−1
1
t
p
(ms)
I
ZSM
(A)
10
BZA856AL
BZA862AL
BZA868AL
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
handbook, halfpage
1
10
10
2
MLD791
10
−2
10
−1
1
t
p
(ms)
P
ZSM
(W)
10
BZA856AL
BZA862AL
BZA868AL
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
P
ZSM
=V
ZSM
× I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
handbook, halfpage
02
V
R
(V)
C
d
(pF)
48
120
0
40
80
6
MLD792
BZA856AL
BZA862AL
BZA868AL
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
T
j
=25°C; f = 1 MHz.
handbook, halfpage
050
T
amb
(°C)
P
tot
(mW)
100 150
400
300
100
0
200
MLD793
Fig.5 Power derating curve.