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2SK3069
Rev.11.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
75 A
Drain peak current I
D(pulse)
Note 1
300 A
Body-drain diode reverse drain current I
DR
75 A
Avalanche current I
AP
Note 3
50 A
Avalanche energy E
AR
Note 3
214 mJ
Channel dissipation Pch
Note 2
100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 µA V
GS
= ±20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 10 µA V
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V I
D
= 1 mA, V
DS
= 10 V
Note 4
— 6.0 7.5 mΩ I
D
= 40 A, V
GS
= 10 V
Note 4
Static drain to source on state
resistance
R
DS(on)
— 8.0 12 mΩ I
D
= 40 A, V
GS
= 4 V
Note 4
Forward transfer admittance |y
fs
| 50 80 — S I
D
= 40 A, V
DS
= 10 V
Note 4
Input capacitance Ciss — 7100 — pF
Output capacitance Coss — 1000 — pF
Reverse transfer capacitance Crss — 280 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Total gate charge Qg — 125 — nC
Gate to source charge Qgs — 25 — nC
Gate to drain charge Qgd — 25 — nC
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 75 A
Turn-on delay time t
d(on)
— 60 — ns
Rise time t
r
— 300 — ns
Turn-off delay time t
d(off)
— 520 — ns
Fall time t
f
— 330 — ns
V
GS
= 10 V, I
D
= 40 A,
R
L
= 0.75 Ω
Body–drain diode forward voltage V
DF
— 1.05 — V I
F
= 75A, V
GS
= 0
Body–drain diode reverse recovery
time
t
rr
— 90 — ns
I
F
= 75A, V
GS
= 0
di
F
/ dt = 50 A/ µs
Note: 4. Pulse test