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CY62128EV30
Document #: 38-05579 Rev. *D Page 3 of 11
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature.................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Potential..........................................–0.3V to V
CC(max)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[4, 5]
.........................–0.3V to V
CC(max)
+ 0.3V
DC Input Voltage
[4,5]
.......................–0.3V to V
CC(max)
+ 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.....................................................> 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[6]
CY62128EV30LL Ind’l/Auto-A –40°C to +85°C 2.2V to
3.6V
Auto-E –40°C to +125°C
Electrical Characteristics
(Over the Operating Range)
Parameter Description Test Conditions
45 ns (Ind’l/Auto-A) 55 ns (Auto-E)
Unit
Min Typ
[3]
Max Min Typ
[3]
Max
V
OH
Output HIGH Voltage I
OH
= –0.1 mA 2.0 2.0 V
I
OH
= –1.0 mA, V
CC
> 2.70V
2.4 2.4 V
V
OL
Output LOW Voltage I
OL
= 0.1 mA 0.4 0.4 V
I
OL
= 2.1 mA, V
CC
> 2.70V 0.4 0.4 V
V
IH
Input HIGH Voltage V
CC
= 2.2V to 2.7V 1.8 V
CC
+
0.3V
1.8 V
CC
+
0.3V
V
V
CC
= 2.7V to 3.6V 2.2 V
CC
+
0.3V
2.2 V
CC
+
0.3V
V
V
IL
Input LOW Voltage V
CC
= 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V
V
CC
= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 –4 +4 μA
I
OZ
Output Leakage Current GND < V
O
< V
CC
, Output Disabled –1 +1 –4 +4 μA
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
11 16 11 35 mA
f = 1 MHz 1.3 2.0 1.3 4.0 mA
I
SB1
Automatic CE
Power down
Current — CMOS Inputs
CE
1
> V
CC
−0.2V, CE
2
< 0.2V
V
IN
> V
CC
–0.2V, V
IN
< 0.2V)
f = f
max
(Address and Data Only),
f = 0 (OE
and WE), V
CC
= 3.60V
14 135μA
I
SB2
[7]
Automatic CE
Power down
Current — CMOS Inputs
CE
1
> V
CC
– 0.2V, CE
2
< 0.2V
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
14 130μA
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100 μs ramp time from 0 to V
CC
(min) and 200 μs wait time after V
CC
stabilization.
7. Only chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
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