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CY62136EV30
MoBL
®
Document #: 38-05569 Rev. *B Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground
Potential ..............................–0.3V to 3.9V (V
CC MAX
+ 0.3V)
DC Voltage Applied to Outputs
in High-Z State
[5,6]
................–0.3V to 3.9V (V
CC MAX
+ 0.3V)
DC Input Voltage
[5,6]
............ –0.3V to 3.9V (V
CC MAX
+ 0.3V)
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
[7]
Device Range
Ambient
Temperature V
CC
[7]
CY62136EV30LL Industrial –40°C to +85°C 2.2V - 3.6V
Electrical Characteristics Over the Operating Range
[5, 6, 7]
Parameter Description Test Conditions
45 ns
UnitMin. Typ.
[4]
Max.
V
OH
Output HIGH
Voltage
I
OH
= –0.1 mA V
CC
= 2.20V 2.0 V
I
OH
= –1.0 mA V
CC
= 2.70V 2.4 V
V
OL
Output LOW
Voltage
I
OL
= 0.1 mA V
CC
= 2.20V 0.4 V
I
OL
= 2.1mA V
CC
= 2.70V 0.4 V
V
IH
Input HIGH Voltage V
CC
= 2.2V to 2.7V 1.8 V
CC
+ 0.3 V
V
CC
= 2.7V to 3.6V 2.2 V
CC
+ 0.3 V
V
IL
Input LOW Voltage V
CC
= 2.2V to 2.7V –0.3 0.6 V
V
CC
= 2.7V to 3.6V –0.3 0.8 V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–1 +1 µA
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled –1 +1 µA
I
CC
V
CC
Operating
Supply Current
f = f
MAX
= 1/t
RC
V
CC
= V
CCmax,
I
OUT
= 0 mA
CMOS levels
15 20 mA
f = 1 MHz 2 2.5
I
SB1
Automatic CE
Power-down
Current — CMOS
Inputs
CE > V
CC
−0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and Data Only),
f = 0 (OE
, and WE),
V
CC
= 3.60V
17µA
I
SB2
Automatic CE
Power-down
Current — CMOS
Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V, f = 0,
V
CC
= 3.60V
17µA
Capacitance (for all packages)
[8]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Notes:
5. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
6. V
IH(max)
=V
CC
+0.75V for pulse durations less than 20ns.
7. Full Device AC operation assumes a 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after V
CC
stabilization.
8. Tested initially and after any design or process changes that may affect these parameters.
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