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CY7C1347G
Document #: 38-05516 Rev. *F Page 9 of 22
Maximum Ratings
Exceeding the maximum ratings may shorten the battery life of
the device. User guidelines are not tested.
Storage Temperature .....................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage on V
DD
Relative to GND.........−0.5V to +4.6V
Supply Voltage on V
DDQ
Relative to GND........−0.5V to +V
DD
DC Voltage Applied to Outputs
in High-Z State........................................... −0.5V to V
DD
+ 0.5V
DC Input Voltage .......................................−0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch-Up Current................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
V
DD
V
DDQ
Commercial 0°C to +70°C 3.3V
−5%/+10%
2.5V −5%
to V
DD
Industrial –40°C to +85°C
Electrical Characteristics
Over the Operating Range
[8, 9]
Parameter Description Test Conditions Min Max Unit
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
IO Supply Voltage 2.375 V
DD
V
V
OH
Output HIGH Voltage For 3.3V IO, I
OH
= –4.0 mA 2.4 V
For 2.5V IO, I
OH
= –1.0 mA 2.0 V
V
OL
Output LOW Voltage For 3.3V IO, I
OL
= 8.0 mA 0.4 V
For 2.5V IO, I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage
[8]
For 3.3V IO 2.0 V
DD
+ 0.3V V
For 2.5V IO 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[8]
For 3.3V IO –0.3 0.8 V
For 2.5V IO –0.3 0.7 V
I
X
Input Leakage Current
Except ZZ and MODE
GND < V
I
< V
DDQ
−55μA
Input Current of MODE Input = V
SS
−30 μA
Input = V
DD
5 μA
Input Current of ZZ Input = V
SS
−5 μA
Input = V
DD
30 μA
I
OZ
Output Leakage Current GND ≤ V
I
≤ V
DDQ,
Output Disabled −55μA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4 ns cycle, 250 MHz 325 mA
5 ns cycle, 200 MHz 265 mA
6 ns cycle, 166 MHz 240 mA
7.5 ns cycle, 133 MHz 225 mA
I
SB1
Automatic CE
Power Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
f = f
MAX
= 1/t
CYC
4 ns cycle, 250 MHz 120 mA
5 ns cycle, 200 MHz 110 mA
6 ns cycle, 166 MHz 100 mA
7.5 ns cycle, 133 MHz 90 mA
I
SB2
Automatic CE
Power Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
< 0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
All speeds 40 mA
Notes
8. Overshoot: V
IH
(AC) < V
DD
+1.5V (pulse width less than t
CYC
/2). Undershoot: V
IL
(AC) > –2V (pulse width less than t
CYC
/2).
9. T
Power up
: assumes a linear ramp from 0V to V
DD
(min) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
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