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13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
8 EPSON S1F77B01 Technical Manual (Rev.1.3)
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
(1) CMOS output
(T
a=25°C RL=∞ unless otherwise specified)
Item Symbol Conditions Min. Typ. Max. Unit
Detecting voltage VDET-
-
VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02 V
Hysteresis width VHYS VHYS=(VDET+)-(VDET-) VDET-*0.03 VDET-*0.05 VDET-*0.07 V
VDD=2.5V, VDET-(S)=1.5V
-
350 700
VDD=3.7V, VDET-(S)=2.7V
-
350 700
Consumption current 1 ISS1
V
DD=5.5V, VDET-(S)=4.6V
-
350 700
nA
VDD=1.3V, VDET-(S)=1.5V
-
280 560
VDD=2.5V, VDET-(S)=2.7V
-
280 560
Consumption current 2 ISS2
V
DD=4.4V, VDET-(S)=4.6V
-
280 560
nA
Max. operating voltage VDDH
-
-
-
5.5 V
Min. operating voltage VDDL
-
0.9
-
-
V
VDD=0.9V, VDS=0.5V 0.2 0.8 1.5
VDD=1.2V, VDS=0.5V 1.0 2.2 3.5
IOUTN
[Nch]
V
DD<VDET-
V
DD=2.4V, VDS=0.5V 5.5 6.8 8.1
VDD=3.0V,
V
DS=VDD-0.5V
2.5 4.5 7.0
VDD=4.0V,
V
DS=VDD-0.5V
4.5 6.2 8.0
Output current
I
OUTP
[Pch]
V
DD>VDET-
V
DD=5.5V,
VDS=VDD-0.5V
6.5 8.2 9.8
mA
td=50ms 42.5 50 57.5
td=100ms 85 100 115
Delay time td
td=200ms 170 200 230
ms
Response time tPHL VDD: (VDET-(S))+1.0V ===> 0.9V
-
-
80 µs
Detecting voltage
temperature
coefficient
∆V
DET
∆Topt
-40°C Topt 85°C
-
±100
-
ppm/°C
(2) Nch open drain output
(T
a=25°C RL=∞ unless otherwise specified)
Item Symbol Conditions Min. Typ. Max. Unit
Detecting voltage VDET-
-
VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02 V
Hysteresis width VHYS VHYS=(VDET+)-(VDET-) VDET-*0.03 VDET-*0.05 VDET-*0.07 V
VDD=2.5V, VDET-(S)=1.5V
-
350 700
VDD=3.7V, VDET-(S)=2.7V
-
350 700
Consumption current 1 ISS1
V
DD=5.5V, VDET-(S)=4.6V
-
350 700
nA
VDD=1.3V, VDET-(S)=1.5V
-
280 560
VDD=2.5V, VDET-(S)=2.7V
-
280 560
Consumption current 2 ISS2
V
DD=4.4V, VDET-(S)=4.6V
-
280 560
nA
Max. operating voltage VDDH
-
-
-
5.5 V
Min. operating voltage VDDL
-
0.9
-
-
V
VDD=0.9V, VDS=0.5V 0.2 0.8 1.5
VDD=1.2V, VDS=0.5V 1.0 2.2 3.5
Output current of
output transistor
IOUTN
[Nch]
VDD<VDET-
V
DD=2.4V, VDS=0.5V 5.5 6.8 8.1
mA
Leak current of output
transistor
ILEAK VDD=5.5V,VDS=5.5V
-
-
0.1 µA
td=50ms 42.5 50 57.5
td=100ms 85 100 115
Delay time td
td=200ms 170 200 230
ms
Response time tPHL VDD: (VDET-(S))+1.0V ===> 0.9V
-
-
80 µs
Detecting voltage
temperature
coefficient
∆V
DET
∆Topt
-40°C Topt 85°C
-
±100
-
ppm/°C