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Advance Data Sheet: Dualeta™ iQA Series – Dual Quarter Brick
©2002-2005 TDK Innoveta Inc.
iQAFullDatasheet080505 2.doc 8/3/2006
℡
(
877
)
498-0099
9/19
Electrical Data:
iQA48015A050M: 5V/3.3V, 15A Output
Characteristic Min Typ Max Unit Notes & Conditions
Output Voltage Initial Setpoint
Vout1
Vout2
4.92
3.25
5
3.3
5.08
3.35
Vdc
Vdc
Vin=Vin,nom; Io=Io,max; Tc = 25˚C
Output Voltage Tolerance
Vout1
Vout2
4.85
3.2
5
3.3
5.15
3.4
Vdc
Vdc
Over all rated input voltage, load, and
temperature conditions to end of life
Efficiency
86* 87.5 --- % Vin=Vin,nom; Io1=7.5A, Io2=7.5A;
Tc = 25˚C
Line Regulation --- 2 5* mV Vin=Vin,min to Vin,max
Load Regulation --- 5 15* mV Io=Io,min to Io,max
Temperature Regulation --- 10 75* mV Tc=Tc,min to Tc,max
Output Current
0 --- 15 A Sum of output currents, Io1+Io2
Output Current Limiting Threshold
--- 17 --- A Vo1 = 0.9*Vo,nom, Tc<Tc,max
Short Circuit Current
--- 3 --- A Vo = 0.25V, Tc = 25˚C; average output
current in current limit hiccup mode
---
---
40
35
80
70
mVpp
mvpp
Output Ripple and Noise Voltage
Vout1
Vout2
Vout1
Vout2
---
---
10
10
---
---
mVrms
mVrms
Measured with 47uF Tantalum and 1uF
ceramic external capacitance – see
input/output ripple measurement figure; BW =
20MHz
Output Voltage Adjustment Range
Dual independent trim – standard
Tracking trim option
1.5
90
---
---
5.5
110
Vdc
%Vout,nom
Vout2 < (Vo1-0.3V)
Either output
%Vout,nom
Dynamic Response:
Recovery Time
Transient Voltage
---
---
0.1
100
---
---
mS
mV
di/dt = 0.1A/uS, Vin=Vin,nom; load step from
50% to 75% of Io,max, either output
Output Voltage Overshoot during startup
Vout1
Vout2
---
---
250
150
---
---
mV
mV
Io=Io,max,Tc=25˚C
Switching Frequency --- 280 --- kHz Fixed
Output Over Voltage Protection
Dual independent trim – standard
Vo1
Vo2
Tracking trim option
Vo1
Vo2
5.6
---
5.6
3.7
---
Vo1
---
---
6.7*
---
7.5*
5.2*
V
V
V
V
External Load Capacitance 0 --- 5000*& uF
Isolation Capacitance --- 1000 --- pF
Isolation Resistance 10 --- --- MΩ
*Engineering Estimate
& Contact TDK Innoveta for applications that require additional capacitance or very low ESR capacitor banks.