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CY7C1380D, CY7C1382D
CY7C1380F, CY7C1382F
Document #: 38-05543 Rev. *F Page 6 of 34
Table 1. Pin Definitions
Name I/O Description
A
0
, A
1
, A Input-
Synchronous
Address inputs used to select one of the address locations. Sampled at the rising edge of
the CLK if ADSP
or ADSC is active LOW, and CE
1
,
CE
2
, and
CE
3
[2]
are sampled active. A1: A0
are fed to the two-bit counter.
.
BW
A
, BW
B
BW
C
, BW
D
Input-
Synchronous
Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM.
Sampled on the rising edge of CLK.
GW Input-
Synchronous
Global write enable input, active LOW. When asserted LOW on the rising edge of CLK, a
global write is conducted (all bytes are written, regardless of the values on BW
X
and BWE).
BWE
Input-
Synchronous
Byte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be
asserted LOW to conduct a byte write.
CLK Input-
Clock
Clock input. Used to capture all synchronous inputs to the device. Also used to increment the
burst counter when ADV
is asserted LOW, during a burst operation.
CE
1
Input-
Synchronous
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with
CE
2
and CE
3
to select or deselect the device. ADSP is ignored
if CE
1
is HIGH.
CE
1
is sampled
only when a new external address is loaded.
CE
2
[2]
Input-
Synchronous
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE
1
and CE
3
to select or deselect the device. CE
2
is sampled only when a new external
address is loaded.
CE
3
[2]
Input-
Synchronous
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
1
and CE
2
to select or deselect the device. CE
3
is sampled only when a new external address
is loaded.
OE
Input-
Asynchronous
Output enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When
LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act
as input data pins. OE is masked during the first clock of a read cycle when emerging from a
deselected state.
ADV Input-
Synchronous
Advance input signal, sampled on the rising edge of CLK, active LOW. When asserted, it
automatically increments the address in a burst cycle.
ADSP Input-
Synchronous
Address strobe from processor, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP
and ADSC are both asserted, only ADSP is
recognized. ASDP
is ignored when CE
1
is deasserted HIGH.
ADSC
Input-
Synchronous
Address strobe from controller, sampled on the rising edge of CLK, active LOW. When
asserted LOW, addresses presented to the device are captured in the address registers. A1: A0
are also loaded into the burst counter. When ADSP
and ADSC are both asserted, only ADSP is
recognized.
ZZ Input-
Asynchronous
ZZ sleep input. This active HIGH input places the device in a non-time critical sleep condition
with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ
pin has an internal pull down.
DQs, DQP
X
I/O-
Synchronous
Bidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered
by the rising edge of CLK. As outputs, they deliver the data contained in the memory location
specified by the addresses presented during the previous clock rise of the read cycle.
The
direction of the pins is controlled by OE
. When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQP
X
are placed in a tri-state condition.
V
DD
Power Supply Power supply inputs to the core of the device.
V
SS
Ground Ground for the core of the device.
V
SSQ
I/O Ground Ground for the I/O circuitry.
V
DDQ
I/O Power
Supply
Power supply for the I/O circuitry.
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