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CY8C22113, CY8C22213
Document Number: 38-12009 Rev. *F Page 16 of 36
DC Electrical Characteristics
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C ≤ T
A
≤ 85°C, or 3.0V to 3.6V and -40°C ≤ T
A
≤ 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and
are for design guidance only or unless otherwise specified.
DC General Purpose IO Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40°C ≤ T
A
≤ 85°C, or 3.0V to 3.6V and -40°C ≤ T
A
≤ 85°C, respectively. Typical parameters apply to 5V and 3.3V at 25°C and
are for design guidance only or unless otherwise specified.
Table 12. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply Voltage 3.00 – 5.25 V
I
DD
Supply Current – 5 8 mA Conditions are Vdd = 5.0V, 25 °C,
CPU = 3 MHz, 48 MHz disabled.
VC1 = 1.5 MHz, VC2 = 93.75 kHz,
VC3 = 93.75 kHz.
I
DD3
Supply Current – 3.3 6.0 mA Conditions are Vdd = 3.3V,
T
A
= 25
°C, CPU = 3 MHz,
48 MHz = Disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz.
I
SB
Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT.
a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.
– 3 6.5 μA Conditions are with internal slow
speed oscillator, Vdd = 3.3V, -40°C
<=
T
A
<= 55
o
C
I
SBH
Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT at high temperature.
a
– 4 25 μA Conditions are with internal slow
speed oscillator, Vdd = 3.3V, 55°C <
T
A
<= 85 °C.
I
SBXTL
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal.
a
– 4 7.5 μA Conditions are with properly loaded, 1
μW max, 32.768 kHz crystal.
Vdd = 3.3V, -40°C <= T
A
<= 55 °C.
I
SBXTLH
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal at high
temperature.
a
– 5 26 μA Conditions are with properly loaded,
1 μW max, 32.768 kHz crystal.
Vdd = 3.3V, 55
°C < T
A
<= 85°C.
V
REF
Reference Voltage (Bandgap) 1.275 1.3 1.325 V Trimmed for appropriate Vdd
Table 13. DC GPIO Specifications
Symbol Description Min Typ Max Units Notes
R
PU
Pull up Resistor 4 5.6 8 kΩ
R
PD
Pull down Resistor 4 5.6 8 kΩ
V
OH
High Output Level Vdd - 1.0 – – V IOH = 10 mA, Vdd = 4.75 to 5.25V (80
mA maximum combined IOH budget)
V
OL
Low Output Level – – 0.75 V IOL = 25 mA, Vdd = 4.75 to 5.25V (150
mA maximum combined IOL budget)
V
IL
Input Low Level – – 0.8 V Vdd = 3.0 to 5.25
V
IH
Input High Level 2.1 – V Vdd = 3.0 to 5.25
V
H
Input Hysterisis – 60 – mV
I
IL
Input Leakage (Absolute Value) – 1 – nA Gross tested to 1 μA
C
IN
Capacitive Load on Pins as Input – 3.5 10 pF Package and pin dependent.
Temp = 25°C
C
OUT
Capacitive Load on Pins as Output – 3.5 10 pF Package and pin dependent.
Temp = 25°C
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