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Philips Semiconductors Product specification
TOPFET high side switch BUK215-50Y
SMD version of BUK210-50Y
Fig.28. Short circuit load threshold voltage.
V
BL(TO)
= f(V
BG
); conditions -40˚C ≤ T
mb
≤ 150˚C
Fig.29. Typical output capacitance. T
mb
= 25 ˚C
C
bl
= f(V
BL
); conditions f = 1 MHz, V
IG
= 0 V
Fig.30. Typical reverse battery characteristic.
I
G
= f(V
BG
); conditions I
L
= 0 A, T
j
= 25 ˚C
Fig.31. Typical overload current, V
BL
= 8V.
I
L
= f(T
j
); parameter V
BG
= 13V;t
p
= 300 µs
Fig.32. Typical short circuit load threshold voltage.
V
BL(TO)
= f(T
j
); condition V
BG
= 16 V
Fig.33. Transient thermal impedance.
Z
th
j-mb
= f(t); parameter D = t
p
/T
0
5
10
15
20
25
30
35
0 1020304050
V
BG
/ V
V
BL(TO)
/ V
min.
max.
typ. 25˚C
BUK215-50Y
30
35
40
45
50
-50 0 50 100 150 200
T
j
/
O
C
I
L(lim)
/ A
BUK215-50Y
0 1020304050
10 nF
1nF
100pF
C
BL
V
BL
/ V
BUK215-50Y
V
BL(TO)
/ V
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-50 0 50 100 150 200
BUK215-50Y
T
j
/
O
C
I
G
/ mA
-200
-150
-100
-50
0
-20 -15 -10 -5 0
V
BG
/ V
BUK215-50Y
D =
t
p
t
p
T
T
P
t
D
BUK215-50Y
Zth j-mb ( K / W )
t / s
1e+02
1e-011e-03
1e-05
1e-07
1e+01
1e-03
1e-02
1e-01
1e+00
D =
0.5
0.2
0.1
0.05
0.02
0
May 2001 11 Rev 1.010