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Philips Semiconductors Product specification
TOPFET high side switch BUK215-50Y
SMD version of BUK210-50Y
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Typical on-state resistance, t
p
= 300 µs.
R
ON
= f(T
j
); parameter V
BG
; condition I
L
= 10 A
Fig.6. Typical on-state characteristics, T
j
= 25 ˚C.
I
L
= f(T
j
); parameter V
BG
; t
p
= 250 µs
Fig.7. Typical supply characteristics, 25 ˚C.
I
G
= f(V
BG
); parameter V
IG
Fig.8. Typical on-state resistance,T
j
= 25 ˚C.
R
ON
= f(V
BG
); condition I
L
= 10 A; t
p
= 300 µs
Fig.9. Typical operating supply current.
I
G
= f(T
j
); parameters I
L
, V
BG
; condition V
IG
= 5 V
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
LOAD
VBL
0
1
2
3
4
5
0 10203040506070
V
BG
/ V
I
BG(ON)
/ mA
OPERATING V
IG
= 5 V
CLAMPING
OVERVOLTAGE
SHUTDOWN
UNDERVOLTAGE
SHUTDOWN
QUIESCENT V
IG
= 0 V
BUK215-50Y
0
20
40
60
80
-50 0 50 100 150 200
T
j
/
O
C
R
ON
/ mOhm
V
BG
= 6 V
9 V =< V
BG
=< 35 V
typ
.
BUK215-50Y
R
ON
/ mOhm
20
22
24
26
28
30
32
34
36
38
40
1 10 100
V
BG
/ V
BUK215-50Y
R
ON
max
0
10
20
30
40
50
012
V
BL
/ V
I
L
/ A
BUK215-50Y
5
6
7
V
BG
/ V
> = 8
0
0.5
1.0
1.5
2.0
2.5
3.0
-50 0 50 100 150 200
T
j
/
O
C
I
G
/ mA
lL > IL(TO)
V
BG
= 50 V
9 V <= V
BG
<= 35 V
typ.
l
L
= 0 A
l
L
> I
L(TO)
BUK215-50Y
May 2001 7 Rev 1.010