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CY8C24123A
CY8C24223A, CY8C24423A
Document Number: 38-12028 Rev. *I Page 20 of 56
DC Electrical Characteristics
DC Chip-Level Specifications
Table 14 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and -40°C
T
A
85°C, 3.0V to 3.6V and -40°C T
A
85°C, or 2.4V to 3.0V and -40°C T
A
85°C, respectively. Typical parameters apply to
5V, 3.3V, and 2.7V at 25°C and are for design guidance only.
Table 14. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply Voltage 2.4 5.25 V See DC POR and LVD specifications,
Table 29 on page 30.
I
DD
Supply Current 5 8 mA Conditions are Vdd = 5.0V, T
A
= 25°C,
CPU = 3 MHz, SYSCLK doubler
disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off.
SLIMO mode = 0. IMO = 24 MHz.
I
DD3
Supply Current 3.3 6.0 mA Conditions are Vdd = 3.3V, T
A
= 25 °C,
CPU = 3 MHz, SYSCLK doubler
disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off. SLIMO mode = 0.
IMO = 24 MHz.
I
DD27
Supply Current 2 4 mA Conditions are Vdd = 2.7V, T
A
= 25°C,
CPU = 0.75 MHz, SYSCLK doubler
disabled, VC1 = 0.375 MHz,
VC2 = 23.44 kHz, VC3 = 0.09 kHz,
analog power = off. SLIMO mode = 1.
IMO = 6 MHz.
I
SB
Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT.
a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.
3 6.5 μA Conditions are with internal slow
speed oscillator, Vdd = 3.3V, -40°C
T
A
55°C, analog power = off.
I
SBH
Sleep (Mode) Current with POR, LVD, Sleep
Timer, and WDT at high temperature.
a
4 25 μA Conditions are with internal slow
speed oscillator, Vdd = 3.3V, 55°C < T
A
85°C, analog power = off.
I
SBXTL
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal.
a
4 7.5 μA Conditions are with properly loaded,
1 μW max, 32.768 kHz crystal.
Vdd = 3.3V, -40°C T
A
55°C, analog
power = off.
I
SBXTLH
Sleep (Mode) Current with POR, LVD, Sleep
Timer, WDT, and external crystal at high
temperature.
a
5 26 μA Conditions are with properly loaded,
1μW max, 32.768 kHz crystal.
Vdd = 3.3 V, 55°C < T
A
85°C, analog
power = off.
V
REF
Reference Voltage (Bandgap) 1.28 1.30 1.33 V Trimmed for appropriate Vdd.
Vdd > 3.0V
V
REF27
Reference Voltage (Bandgap) 1.16 1.30 1.33 V Trimmed for appropriate Vdd.
Vdd = 2.4V to 3.0V
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