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CYD01S36V
CYD02S36V/36VA/CYD04S36V
CYD09S36V/CYD18S36V
Document Number: 38-06076 Rev. *G Page 12 of 28
Maximum Ratings
Exceeding maximum ratings
[25]
may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature.................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential................–0.5V to +4.6V
DC Voltage Applied to
Outputs in High-Z State..........................–0.5V to V
DD
+0.5V
DC Input Voltage ..............................–0.5V to V
DD
+ 0.5V
[26]
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage...........................................> 2000V
(JEDEC JESD22-A114-2000B)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient
Temperature
V
DDIO/VTTL
V
CORE
[13]
Commercial 0°C to +70°C 3.3V±165 mV 1.8V±100 mV
Industrial –40°C to +85°C 3.3V±165 mV 1.8V±100 mV
Notes
25.The voltage on any input or IO pin cannot exceed the power pin during power up.
26.Pulse width < 20 ns.
27.I
SB1
, I
SB2
, I
SB3
and I
SB4
are not applicable for CYD18S36V because it cannot be powered down by using chip enable pins.
28.C
OUT
also references C
IO
.
29.Except INT
and CNTINT which are 20 pF.
Electrical Characteristics Over the Operating Range
Parameter Description
-167 -133 -100
Unit
Min Typ. Max Min Typ. Max Min Typ. Max
V
OH
Output HIGH Voltage (V
DD
= Min, I
OH
= –4.0 mA) 2.4 2.4 2.4 V
V
OL
Output LOW Voltage (V
DD
= Min, I
OL
= +4.0 mA) 0.4 0.4 0.4 V
V
IH
Input HIGH Voltage 2.0 2.0 2.0 V
V
IL
Input LOW Voltage 0.8 0.8 0.8 V
I
OZ
Output Leakage Current –10 10 –10 10 –10 10 μA
I
IX1
Input Leakage Current Except TDI, TMS, MRST –10 10 –10 10 –10 10 μA
I
IX2
Input Leakage Current TDI, TMS, MRST –1.0 0.1 –1.0 0.1 –1.0 0.1 mA
I
CC
Operating Current for
(V
DD
= Max.,I
OUT
= 0 mA), Outputs
Disabled
CYD01S36V
CYD02S36V/
CYD02S36VA/
CYD04S36V
225 300 225 300 mA
CYD09S36V 450 600 370 540
mA
CYD18S36V 410 580 315 450
mA
I
SB1
[27]
Standby Current (Both Ports TTL Level)
CE
L
and CE
R
≥ V
IH
, f = f
MAX
90 115 90 115 mA
I
SB2
[27]
Standby Current (One Port TTL Level)
CE
L
| CE
R
≥ V
IH
, f = f
MAX
160 210 160 210 mA
I
SB3
[27]
Standby Current (Both Ports CMOS Level)
CE
L
and CE
R
≥ V
DD
– 0.2V, f = 0
55 75 55 75 mA
I
SB4
[27]
Standby Current (One Port CMOS Level)
CE
L
| CE
R
≥ V
IH
, f = f
MAX
160 210 160 210 mA
I
SB5
Operating Current (VDDIO = Max,
Iout = 0 mA, f = 0) Outputs Disabled
CYD18S36V 75 75 mA
I
CORE
[13]
Core Operating Current for (V
DD
= Max, I
OUT
= 0 mA),
Outputs Disabled
00 0 0 0 0mA
Capacitance
Part Number Parameter
[28]
Description Test Conditions Max Unit
CYD01S36/
CYD02S36V/36VA/
CYD04S36V
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V
13 pF
C
OUT
Output Capacitance 10 pF
CYD09S36V C
IN
Input Capacitance 22 pF
C
OUT
Output Capacitance 10
[29]
pF
CYD18S36V C
IN
Input Capacitance 40 pF
C
OUT
Output Capacitance 20 pF
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