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Installing and Configuring the EVGA nForce 680i SLI Motherboard
75
Memory Timing
This section of the Adjust Motherboard Settings allows you to adjust various
memory timings and cycles.
Row Address Strobe
Adjusts the minimum RAS active time. This is the amount of time between a
row being activated by Precharge and deactivated. A row cannot be
deactivated until tRAS has completed. The lower this value, the faster the
performance. However, if it is set too low it can cause data corruption by
deactivating the row to soon. Adjustable from 1 to 63.
Write Recovery Time
Memory timing that determines the delay between a write command and a
Precharge command is set to the same bank of memory. Adjustable from 1
to 15.
W to R Termination Turnaround
The Write-to-Read time is the number of clock cycles between the last write
data pair and the subsequent READ command to the same physical block.
Adjustable from 1 to 15.
RAS to CAS access
The RAS-to-CAS access (tRCD) is the amount of time in cycles for issuing
an active command and the read/write commands. Adjustable from 1 to 15.
Clicking on View SPD… displays a
memory information window. This is
for information only and is not editable.
When you select an option, information explaining
the selection is displayed in the area below the
Memory Timing box.