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Table 42. VCCIO_OUT, VCOMP_OUT, and VCCIO_TERM
Symbol Parameter Typ Max Units Notes
VCCIO_OUT
Termination
Voltage
1.0
— V
ICCIO_OUT Maximum
External Load
— 300 mA
VCOMP_OUT Termination
Voltage
1.0 — V 1
VCCIO_TERM Termination
Voltage
1.0 — V 2
Notes: 1. VCOMP_OUT may only be used to connect to PEG_RCOMP and DP_RCOMP.
2. Internal processor power for signal termination.
Table 43. DDR3/DDR3L Signal Group DC Specifications
Symbol Parameter Min Typ Max Units Notes
1
V
IL
Input Low Voltage — V
DDQ
/2 0.43*V
DDQ
V 2, 4, 11
V
IH
Input High Voltage 0.57*V
DDQ
V
DDQ
/2 — V 3, 11
V
IL
Input Low Voltage
(SM_DRAMPWROK)
— — 0.15*V
DDQ
V —
V
IH
Input High Voltage
(SM_DRAMPWROK)
0.45*V
DDQ
— 1.0 V 10, 12
R
ON_UP(DQ)
DDR3/DDR3L Data
Buffer pull-up
Resistance
20 26 32 Ω 5, 11
R
ON_DN(DQ)
DDR3/DDR3L Data
Buffer pull-down
Resistance
20 26 32 Ω 5, 11
R
ODT(DQ)
DDR3/DDR3L On-die
termination equivalent
resistance for data
signals
38
50 62 Ω 11
V
ODT(DC)
DDR3/DDR3L On-die
termination DC working
point (driver set to
receive mode)
0.45*V
DDQ
0.5*V
DDQ
0.55*V
DDQ
V 11
R
ON_UP(CK)
DDR3/DDR3L Clock
Buffer pull-up
Resistance
20 26 32 Ω 5, 11,
13
R
ON_DN(CK)
DDR3/DDR3L Clock
Buffer pull-down
Resistance
20 26 32 Ω
5, 11,
13
R
ON_UP(CMD)
DDR3/DDR3L Command
Buffer pull-up
Resistance
15 20 25 Ω
5, 11,
13
R
ON_DN(CMD)
DDR3/DDR3L Command
Buffer pull-down
Resistance
15 20 25 Ω
5, 11,
13
R
ON_UP(CTL)
DDR3/DDR3L Control
Buffer pull-up
Resistance
19 25 31 Ω
5, 11,
13
continued...
Processor—Electrical Specifications
Intel
®
Xeon
®
Processor E3-1200 v3 Product Family
Datasheet – Volume 1 of 2 June 2013
96 Order No.: 328907-001