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samsung.com/semi/sram
18
1H 2011
DDR I / II / II+
DDR SYNCHRONOUS SRAM
Type Density Organization Part Number Package Vdd (V) Access Time
tCD (ns)
Cycle Time I/O Voltage
(V)
Production
Status
Comments
DDR
16Mb
512Kx36 K7D163674B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production
1Mx18 K7D161874B 153-BGA 1.8~2.5 2.3 330, 300 1.5~1.9 Mass Production
8Mb
256Kx36 K7D803671B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs
512Kx18 K7D801871B 153-BGA 2.5 1.7/1.9/2.1 333, 330, 250 1.5 (Max 2.0) Not for new designs
DDR II
CIO/SIO
72Mb
4Mx18
K7I641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B
K7J641882M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
2Mx36
K7I643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-4B
K7J643682M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
36Mb
2Mx18
K7I321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B
K7I321884C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B
K7J321882C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B
1Mx36
K7I323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-2B
K7I323684C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production CIO-4B
K7J323682C 165-FBGA 1.8 0.45 300,250 1.5,1.8 Mass Production SIO-2B
18Mb
1Mx18
K7I161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production CIO-4B
K7J161882B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
512Kx36
K7J163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production SIO-2B
K7I163682B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production CIO-2B
K7I163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production CIO-4B
DDR II+
CIO
36Mb
2Mx18
K7K3218T2C 165-FBGA 1.8 0.45 400 1.5 Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K3218U2C 165-FBGA 1.8 0.45 400 2.5 Mass Production
DDRII + CIO-2B,
2.5 clocks latancy
1Mx36
K7K3236T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K3236U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production
DDRII + CIO-2B,
2.5clocks latancy
18Mb
1Mx18
K7K1618T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
DDRII + CIO-2B,
2 clocks latancy
K7K1618U2C 165-FBGA 1.8 0.45 400, 334 2.5 Mass Production
DDRII + CIO-2B,
2.5clocks latancy
512Kx36 K7K1636T2C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
DDRII + CIO-2B,
2 clocks latancy
NOTES: 2B = Burst of 2
4B = Burst of 4
SIO = Separate I/O
CIO = Common I/O
For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz