Samsung 1H 2011 Computer Accessories User Manual


  Open as PDF
of 28
 
samsung.com/semi/sram 19
1H 2011
SRAM
QDR I / II / II+
QDR SYNCHRONOUS SRAM
Type Density Organization Part
Number
Package Vdd
(V)
Access Time
tCD (ns)
Cycle Time I/O Voltage
(V)
Production
Status
Comments
QDR I 18Mb
1Mx18
K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B
K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B
512Kx36
K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B
K7Q163664B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B
QDR II
72Mb
8Mx9 K7R640982M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B
4Mx18
K7R641882M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B
K7R641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B
2Mx36
K7R643682M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B
K7R643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B
36Mb
4Mx9 K7R320982C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B
2Mx18
K7R321882C 165-FBGA 1.8 0.45 167, 250, 200 1.5,1.8 Mass Production QDR II-2B
K7R321884C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B
1Mx36
K7R323682C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B
K7R323684C 165-FBGA 1.8 0.45 200, 300, 250 1.5,1.8 Mass Production QDR II-4B
18Mb
2Mx9 K7R160982B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B
1Mx18
K7R161882B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B
K7R161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B
512Kx36
K7R163682B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B
K7R163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B
QDR II+
36Mb
1Mx36
K7S3236T4C 165-FBGA 1.8 0.45 400 1.5 Mass Production
QDR II + 4B,
2 clocks latancy
K7S3236U4C 165-FBGA 1.8 0.45 400 2.5 Mass Production
QDR II + 4B,
2.5 clocks latancy
2Mx18
K7S3218T4C 165-FBGA 1.8 0.45 400 1.5 Mass Production
QDR II + 4B,
2 clocks latancy
K7S3218U4C 165-FBGA 1.8 0.45 400 1.5 Mass Production
QDR II + 4B,
2.5 clocks latancy
18Mb
1Mx18 K7S1618T4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II + 4B,
2 clocks latancy
512Kx36 K7S1636U4C 165-FBGA 1.8 0.45 400, 333 1.5 Mass Production
QDR II + 4B,
2.5 clocks latancy
NOTES: For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4
For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit
For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended
For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed
 previous next