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PRELIMINARY
CY14B101P
Document #: 001-44109 Rev. *B Page 26 of 32
AutoStore or Power Up RECALL
Parameters Description
CY14B101P
Unit
Min Max
t
FA
[8]
Power Up RECALL Duration 20 ms
t
STORE
[9]
STORE Cycle Duration 8 ms
t
DELAY
[10]
Time Allowed to Complete SRAM Cycle 25 ns
V
SWITCH
Low Voltage Trigger Level 2.65 V
t
VCCRISE
VCC Rise Time 150 µs
V
HDIS
[6]
HSB Output Driver Disable Voltage 1.9 V
t
LZHSB
HSB To Output Active Time 5 µs
t
HHHD
HSB High Active Time 500 ns
Notes
8. t
FA
starts from the time V
CC
rises above V
SWITCH.
9. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware Store takes place.
10. On a Hardware Store, Software Store / Recall, AutoStore Enable / Disable and AutoStore initiation, SRAM operation continues to be enabled for time t
DELAY
.Read and
Write cycles are ignored during STORE, RECALL, and while VCC is below V
SWITCH.
11. HSB pin is driven HIGH to VCC only by internal 100kOhm resistor, HSB driver is disabled.
Switching Waveforms
Figure 27. AutoStore or Power Up RECALL
[10]
t
STORE
t
STORE
t
HHHD
t
HHHD
t
DELAY
t
DELAY
V
VCCRISE
Note
9
Note
9
Note
11
t
LZHSB
t
LZHSB
t
FA
t
FA
V
SWITCH
V
HDIS
HSB OUT
Autostore
POWER-UP
RECALL
Read and Write
Inhibited (RWI)
POWER-UP
RECALL
POWER-UP
RECALL
Read and Write Read and Write
BROWN
OUT
AUTOSTORE
POWER
DOWN
AUTOSTORE
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