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PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 7 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f = 100 MHz
150 - - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- - 12 pF
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
-- 50µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 180 µA
h
FE
DC current gain V
CE
=5V; I
C
= 5 mA 60 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA - 1.1 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA 2.5 1.7 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- - 2.5 pF
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit