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1998 Feb 16 28
Philips Semiconductors Product specification
CMOS digital decoding IC with RAM for
Compact Disc
SAA7345
3-state outputs MISC, SCLK, WCLK, DATA and CL11
V
OL
LOW level output voltage I
OL
= 1 mA 0 − 0.4 V
V
OH
HIGH level output voltage I
OH
= −1mA V
DD
− 0.4 − V
DD
V
C
L
load capacitance −−50 pF
t
r
output rise time C
L
= 20 pF; note 1 −−15 ns
t
f
output fall time C
L
= 20 pF; note 1 −−15 ns
I
LI
3-state leakage current V
I
= 0 to V
DD
−10 − +10 µA
3-state outputs MOTO1, MOTO2 and DOBM
V
OL
LOW level output voltage V
DD
= 4.5 to 5.5 V;
I
OL
=10mA
0 − 1.0 V
V
DD
= 3.4 to 5.5 V;
I
OL
=5mA
0 − 1.0 V
V
OH
HIGH level output voltage V
DD
= 4.5 to 5.5 V;
I
OH
= −10 mA
V
DD
− 1 − V
DD
V
V
DD
= 3.4 to 5.5 V;
I
OH
= −5mA
V
DD
− 1 − V
DD
V
C
L
load capacitance −−50 pF
t
r
output rise time C
L
= 20 pF; note 1 −−10 ns
t
f
output fall time C
L
= 20 pF; note 1 −−10 ns
I
LI
3-state leakage current V
I
= 0 to V
DD
−10 − +10 µA
Digital input/output DA
V
IL
LOW level input voltage −0.3 − 0.3V
DD
V
V
IH
HIGH level input voltage 0.7V
DD
− V
DD
+ 0.3 V
I
LI
3-state leakage current V
I
= 0 to V
DD
−10 − +10 µA
C
I
input capacitance −−10 pF
V
OL
LOW level output voltage I
OL
= 1 mA 0 − 0.4 V
V
OH
HIGH level output voltage I
OH
= −1mA V
DD
− 0.4 − V
DD
V
C
L
load capacitance −−50 pF
t
r
output rise time C
L
= 20 pF; note 1 −−15 ns
t
f
output fall time C
L
= 20 pF; note 1 −−15 ns
Crystal oscillator input CRIN (external clock)
g
m
mutual conductance at start-up − 4 − mS
R
O
output resistance at start-up − 11 − kΩ
C
I
input capacitance −−10 pF
I
LI
input leakage current −10 − +10 µA
Crystal oscillator output CROUT (see Fig.26)
f
xtal
crystal frequency 8 16.9344 35 MHz
C
fb
feedback capacitance −−5pF
C
O
output capacitance −−10 pF
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT