Samsung M471B1G73AH0 Computer Hardware User Manual


 
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Unbuffered SODIMM datasheet DDR3 SDRAM
Rev. 1.0
[ Table 17 ] Timing Parameters by Speed Bin (Cont.)
Speed DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600
Units NOTE
Parameter Symbol MIN MAX MIN MAX MIN MAX MIN MAX
Power Down Timing
Exit Power Down with DLL on to any valid com-
mand;Exit Precharge Power Down with DLL
frozen to commands not requiring a locked DLL
tXP
max
(3nCK,
7.5ns)
-
max
(3nCK,
7.5ns)
-
max
(3nCK,6ns)
-
max
(3nCK,6ns)
-
Exit Precharge Power Down with DLL frozen to com-
mands requiring a locked DLL
tXPDLL
max
(10nCK,
24ns)
-
max
(10nCK,
24ns)
-
max
(10nCK,
24ns)
-
max
(10nCK,
24ns)
- 2
CKE minimum pulse width tCKE
max
(3nCK,
7.5ns)
-
max
(3nCK,
5.625ns)
-
max
(3nCK,
5.625ns)
-
max
(3nCK,5ns)
-
Command pass disable delay tCPDED 1 - 1 - 1 - 1 - nCK
Power Down Entry to Exit Timing tPD tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCKE(min) 9*tREFI tCK 15
Timing of ACT command to Power Down entry tACTPDEN 1 - 1 - 1 - 1 - nCK 20
Timing of PRE command to Power Down entry tPRPDEN 1 - 1 - 1 - 1 - nCK 20
Timing of RD/RDA command to Power Down entry tRDPDEN RL + 4 +1 - RL + 4 +1 - RL + 4 +1 - RL + 4 +1 -
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
WL + 4
+(tWR/
tCK(avg))
-
WL + 4
+(tWR/
tCK(avg))
-
WL + 4
+(tWR/
tCK(avg))
-
WL + 4
+(tWR/
tCK(avg))
- nCK 9
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRAPDEN
WL + 4
+WR +1
-
WL + 4
+WR +1
-
WL + 4 +WR
+1
-
WL + 4 +WR
+1
- nCK 10
Timing of WR command to Power Down entry
(BC4MRS)
tWRPDEN
WL + 2
+(tWR/
tCK(avg))
-
WL + 2
+(tWR/
tCK(avg))
-
WL + 2
+(tWR/
tCK(avg))
-
WL + 2
+(tWR/
tCK(avg))
- nCK 9
Timing of WRA command to Power Down entry
(BC4MRS)
tWRAPDEN
WL +2 +WR
+1
-
WL +2 +WR
+1
-
WL +2 +WR
+1
-
WL +2 +WR
+1
- nCK 10
Timing of REF command to Power Down entry tREFPDEN 1 - 1 - 1 - 1 - 20,21
Timing of MRS command to Power Down entry tMRSPDEN tMOD(min) - tMOD(min) - tMOD(min) - tMOD(min) -
ODT Timing
ODT high time without write command or with write
command and BC4
ODTH4 4 - 4 - 4 - 4 - nCK
ODT high time with Write command and BL8 ODTH8 6 - 6 - 6 - 6 - nCK
Asynchronous RTT turn-on delay (Power-Down with
DLL frozen)
tAONPD 2 8.5 2 8.5 2 8.5 2 8.5 ns
Asynchronous RTT turn-off delay (Power-Down with
DLL frozen)
tAOFPD 2 8.5 2 8.5 2 8.5 2 8.5 ns
RTT turn-on tAON -400 400 -300 300 -250 250 -225 225 ps 7,f
RTT_NOM and RTT_WR turn-off time from ODTLoff
reference
tAOF 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7
tCK(avg
)
8,f
RTT dynamic change skew tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7
tCK(avg
)
f
Write Leveling Timing
First DQS pulse rising edge after tDQSS margining
mode is programmed
tWLMRD 40 - 40 - 40 - 40 - tCK 3
DQS/DQS delay after tDQS margining mode is pro-
grammed
tWLDQSEN 25 - 25 - 25 - 25 - tCK 3
Write leveling setup time from rising CK, CK crossing to
rising DQS, DQS
crossing
tWLS 325 - 245 - 195 - 165 - ps
Write leveling hold time from rising DQS, DQS crossing
to rising CK, CK
crossing
tWLH 325 - 245 - 195 - 165 - ps
Write leveling output delay tWLO 0 9 0 9 0 9 0 7.5 ns
Write leveling output error tWLOE 0 2 0 2 0 2 0 2 ns