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1999 Oct 12 17
Philips Semiconductors Product specification
IC card interface TDA8002C
CHARACTERISTICS
V
DD
= 3.3 V; T
amb
=25°C; f
xtal
= 10 MHz; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
V
DD
supply voltage 3 − 6.5 V
I
DD(lp)
supply current low-power mode −−150 µA
I
DD(idle)
supply current Idle mode; f
CLKOUT
= 10 MHz −−5mA
I
DD(active)
supply current active mode; V
CC(O)
=5V;
f
CLKOUT
=10MHz
f
CLK
= LOW; I
CC
= 100 µA −−8mA
f
CLK
= 5 MHz; I
CC
=10mA −−50 mA
f
CLK
= 5 MHz; I
CC
=55mA −−140 mA
active mode; V
CC(O)
=3V;
f
CLKOUT
=10MHz
f
CLK
= LOW; I
CC
= 100 µA −−8mA
f
CLK
= 5 MHz; I
CC
=10mA −−50 mA
f
CLK
= 5 MHz; I
CC
=55mA −−140 mA
V
th2
threshold voltage on V
DD
for
voltage supervisor
falling 2.2 − 2.4 V
V
hys2
hysteresis on V
th2
50 100 150 mV
Card supply
V
CC(O)
output voltage Idle mode −−0.3 V
active mode
V
CC
=5V;I
CC
< 55 mA;
DC load
4.6 − 5.4 V
I
CC
= 40 nAs; AC load 4.6 − 5.4 V
V
CC
= 3 V; I
CC
< 55 mA;
DC load
2.76 − 3.24 V
I
CC
= 24 nAs; AC load 2.76 − 3.24 V
I
CC(O)
output current V
CC(O)
= from 0 to 5 or 3 V −−55 mA
V
CC
short-circuited to ground − 200 − mA
SR slew rate rising or falling slope 0.10 0.15 0.20 V/µs
Crystal connections (XTAL1 and XTAL2)
C
ext
external capacitors note 1 − 15 − pF
f
xtal
resonance frequency note 2 2 − 24 MHz