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180 Intel® Xeon® Processor E5-1600/E5-2600/E5-4600 Product Families
Datasheet Volume One
Notes:
1. V
TT
refers to instantaneous V
TT
.
2. Measured at 0.31*V
TT
3. Vin between 0V and V
TT
4. Refer to the appropriate Platform Design Guide (PDG) for routing design guidelines.
Notes:
R
ON
Buffer On Resistance
Signals SVIDCLK, SVIDDATA
14
Ω 2
I
IL
Input Leakage Current
Signals SVIDCLK, SVIDDATA
±900
μA3,4
I
IL
Input Leakage Current
Signal SVIDALERT_N
±500
μA3,4
Table 7-22. Processor Asynchronous Sideband DC Specifications
Symbol Parameter Min Max Units Notes
Input Edge Rate
Signals: CAT_ERR_N, MEM_HOT_C{01/23}_N,
PMSYNC, PROCHOT_N, PWRGOOD, RESET_N
0.05 V/ns 4,5
CMOS1.05v Signals
V
IL_CMOS1.05v
Input Low Voltage 0.3*V
TT
V1,2
V
IH_CMOS1.05v
Input High Voltage 0.7*V
TT
V1,2
V
IL_MAX
Input Low Voltage
Signal PWRGOOD
0.320 V 1,2,5,
V
IH_MIN
Input High Voltage
Signal PWRGOOD
0.640 V 1,2,5
V
OL_CMOS1.05v
Output Low Voltage 0.12*V
TT
V1,2
V
OH_CMOS1.05v
Output High Voltage 0.88*V
TT
V1,2
I
IL_CMOS1.05v
Input Leakage Current ±50 mA 1,2
I
O_CMOS1.05v
Output Current
(R
TEST
= 500 ohm)
±1.50 mA 1,2
A
NM_Rise
Non-Monotonicity Amplitude, Rising Edge
Signal PWRGOOD
0.135 V 5
A
NM_Fall
Non-Monotonicity Amplitude, Falling Edge
Signal PWRGOOD
0.165 V 5
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
Input Low Voltage 0.3*V
TT
V1,2
V
IH_ODCMOS
Input High Voltage 0.7*V
TT
V1,2
V
OH_ODCMOS
Output High Voltage
Signals: CAT_ERR_N, ERROR_N[2:0],
THERMTRIP_N, PROCHOT_N, CPU_ONLY_RESET
V
TT(max)
V1,2
I
OL
Output Leakage Current,
Signal MEM_HOT_C{01/23}_N
±100 mA 3
I
OL
Output Leakage Current
(R
TEST
= 50 ohm)
±900 mA 3
R
ON
Buffer On Resistance
Signals: CAT_ERR_N, CPU_ONLY_RESET,
ERROR_N[2:0], MEM_HOT_C{01/23}_N,
PROCHOT_N, THERMTRIP_N
14 W 1,2
Table 7-21. Serial VID Interface (SVID) DC Specifications (Sheet 2 of 2)
Symbol Parameter Min Typ Max Units Notes