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Rev.1.02 Jul 01, 2005 page 270 of 314
REJ09B0126-0102
M16C/6N Group (M16C/6NL, M16C/6NN) 21. Electric Characteristics
Under development
This document is under development and its contents are subject to change.
Table 21.5 Electrical Characteristics (2)
(1)
Mask ROM f(BCLK) = 24MHz,
PLL operation,
No division
On-chip oscillation,
No division
Flash Memory f(BCLK) = 24MHz,
PLL operation,
No division
On-chip oscillation,
No division
Flash Memory f(BCLK) = 10MHz,
Program VCC = 5V
Flash Memory f(BCLK) = 10MHz,
Erase VCC = 5V
Mask ROM f(BCLK) = 32kHz,
Low power dissipation
mode, ROM
(2)
Flash Memory f(BCLK) = 32kHz,
Low power dissipation
mode, RAM
(2)
f(BCLK) = 32kHz,
Low power dissipation
mode,
Flash memory
(2)
Mask ROM On-chip oscillation,
Flash Memory Wait mode
f(BCLK) = 32kHz,
Wait mode (3),
Oscillation capacity High
f(BCLK) = 32kHz,
Wait mode (3),
Oscillation capacity Low
Stop mode,
Topr = 25°C
NOTES:
1. Referenced to VCC = 3.0 to 5.5V, VSS = 0V at Topr = –40 to 85°C, f(BCLK) = 24MHz unless otherwise specified.
2. This indicates the memory in which the program to be executed exists.
3. With one timer operated using fC32.
19
1
21
1.8
15
25
25
25
420
50
8.5
3.0
0.8
Power Supply
Current
(VCC
= 3.0 to 5.5V)
ICC
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
Measuring Condition
Standard
Min.
Unit
33
35
3.0
ParameterSymbol
Output pins are open
and other pins are VSS.
Typ.
Max.