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Datasheet 71
Electrical Specifications
Notes:
1. This table applies to the processor sideband and miscellaneous signals specified in Table 7-5.
2. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
3. These signals are measured between V
IL
and V
IH
.
Table 7-19. Processor Asynchronous Sideband DC Specifications
Symbol Parameter Min Max Units Notes
CMOS1.0v Signals
V
IL_CMOS1.0v
Input Low Voltage — 0.3*V
TT
V 1, 2
V
IH_CMOS1.0v
Input High Voltage 0.7*V
TT
— V 1, 2
V
Hysteresis
Hysteresis 0.1*V
TT
— V 1, 2
I
IL_CMOS1.0v
Input Leakage Current 50 200 A 1, 2
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
Input Low Voltage
Signals: MEM_HOT_C01/23_N, PROCHOT_N
— 0.3*V
TT
V 1, 2
V
IL_ODCMOS
Input Low Voltage
Signals: CAT_ERR_N
— 0.4*V
TT
V 1,2
V
IH_ODCMOS
Input High Voltage 0.7*V
TT
— V 1, 2
V
OL_ODCMOS
Output Low Voltage — 0.2*V
TT
V 1, 2
V
Hysteresis
Hysteresis
Signals: MEM_HOT_C01/23_N, PROCHOT_N
— 0.1*V
TT
V 1, 2
V
Hysteresis
Hysteresis
Signal: CAT_ERR_N
0.05*V
TT
— V 1, 2
I
Leak
Input Leakage Current 50 200 A
R
ON
Buffer On Resistance 4 14 W 1, 2
Output Edge Rate
Signal:MEM_HOT_C{01/23}_N, ERROR_N[2:0],
THERMTRIP, PROCHOT_N
0.05 0.60 V/ns 3
Output Edge Rate
Signal: CAT_ERR_N
0.2 1.5 V/ns 3
Table 7-20. Miscellaneous Signals DC Specifications
Symbol Parameter Min Typical Max Units Notes
IVT_ID_N Signal
V
O_ABS_MAX
Output Absolute Maximum Voltage — 1.10 1.80 V
I
O
Output Current — — 0 A1
SKTOCC_N Signal
V
O_ABS_MAX
Output Absolute Maximum Voltage — 3.30 3.50 V
I
OMAX
Output Maximum Current — — 1 mA
Notes:
1. IVT_ID_N land is a no connect on the die.