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34 PRELIMINARY
8XC251SA/SB/SP/SQ HIGH-PERFORMANCE CHMOS MICROCONTROLLER
7.2 Programming and Verification Timing for Nonvolatile Memory
Figure 21. Timing for Programming and Verification of Nonvolatile Memory
Table 18. Nonvolatile Memory Programming and Verification Characteristics at
T
A
= 21 – 27 °C, V
CC
= 5 V, and V
SS
= 0 V
Symbol Definition Min Max Units
V
PP
Programming Supply Voltage 12.5 13.5 D.C. Volts
I
PP
Programming Supply Current 75 mA
F
OSC
Oscillator Frequency 4.0 6.0 MHz
T
AVGL
Address Setup to PROG# Low 48T
OSC
T
GHAX
Address Hold after PROG# 48T
OSC
T
DVGL
Data Setup to PROG# Low 48T
OSC
T
GHDX
Data Hold after PROG# 48T
OSC
T
EHSH
ENABLE High to V
PP
48T
OSC
T
SHGL
V
PP
Setup to PROG# Low 10 µs
T
GHSL
V
PP
Hold after PROG# 10 µs
T
GLGH
PROG# Width 90 110 µs
PROG#
EA#/V
PP
P1, P3
A4128-01
AddressAddress (16 Bits)
P2
Data Out
Data In (8 Bits)
T
AVQV
T
GHDX
T
GHAX
T
DVGL
T
AVGL
T
GHGL
T
GHSL
12345
T
GLGH
T
SHGL
P0
Mode
Mode (8 Bits)
T
EHSH
T
ELQV
T
EHQZ
12.75V
Programming Cycle Verification Cycle
5V