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MN102HF75K Flash EEPROM Version
Reprogramming Flow
Panasonic Semiconductor Development Company MN102H75K/F75K/85K/F85K LSI User Manual
328
Panasonic
B.5 Reprogramming Flow
Figure B-12 shows the flow for reprogramming (erasing and programming) the
flash memory.
Always program after erasing is
completed.Erasing is sometimes not
done finely,even though PROM-
writer or onboard serial writer
shows “PASS“in blank check. And
in that situation the data programed
successfully may be incorrect.
Rewriting the data to the address
where data has already set is forbid-
den.
As the figure shows, the write occurs after the memory is completely erased. The
erase routine consists of three steps, first writing all zeros to the entire memory
space, next erasing the memory, and finally reversing.
B.6 Programming Times
Table B-7 shows the time required for PROM and serial programming and repro-
gramming (erasing and programming).
Figure B-12 EEPROM Programming Flow
Write 0s to entire memory
Erase
Reverse
Write user program
Erase routine
Table B-7 Programming Times for PROM and Serial Writers
Writer
Programming Time
(User Program Only)
Reprogramming
Time
DATA-I/O LabSite DIP48-1
TBA TBA
YDC AF200 (provisional)
— 3.5–4 minutes
Note: Times indicated are minimum time requirements.