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Intel® Xeon® Processor E5-1600 v2/E5-2600 v2 Product Families 151
Datasheet Volume One of Two
Electrical Specifications
Notes:
1. V
TT
refers to instantaneous V
TT
.
2. Measured at 0.31*V
TT
3. Vin between 0V and V
TT
4. These are measured between VIL and VIH.
5. The signal edge rate must be met or the signal must transition monotonically to the asserted state.
Notes:
1. This table applies to the processor sideband and miscellaneous signals specified in Table 7-5.
2. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
3. These signals are measured between VIL and VIH.
I
IL
Input Leakage Current +/-50 ±200 μA3,4
Input Edge Rate
Signal: SVIDALERT_N
0.05 V/ns 5, 6
Output Edge Rate (50 ohm to V
TT
)0.20 1.5V/ns5
Table 7-21. Processor Asynchronous Sideband DC Specifications
Symbol Parameter Min Max Units Notes
CMOS1.0v Signals
V
IL_CMOS1.0v
Input Low Voltage 0.3*V
TT
V1,2
V
IH_CMOS1.0v
Input High Voltage 0.7*V
TT
V1,2
V
Hysteresis
Hysteresis 0.1*V
TT
V1,2
I
IL_CMOS1.0v
Input Leakage Current 50 200 μA1,2
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
Input Low Voltage
Signals:
MEM_HOT_C01/23_N,
PROCHOT_N
0.3*V
TT
V1,2
V
IL_ODCMOS
Input Low Voltage
Signals: CAT_ERR_N
0.4*V
TT
V1,2
V
IH_ODCMOS
Input High Voltage 0.7*V
TT
V1,2
V
OL_ODCMOS
Output Low Voltage 0.2*V
TT
V1,2
V
Hysteresis
Hysteresis
Signals:
MEM_HOT_C01/23_N,
PROCHOT_N
0.1*V
TT
V1,2
V
Hysteresis
Hysteresis
Signal: CAT_ERR_N
0.05*V
TT
V1,2
I
Leak
Input Leakage Current 50 200 μA
R
ON
Buffer On Resistance 4 14 Ω 1,2
Output Edge Rate
Signal:MEM_HOT_C{01/23}_
N, ERROR_N[2:0],
THERMTRIP, PROCHOT_N
0.05 0.60 V/ns 3
Output Edge Rate
Signal: CAT_ERR_N
0.2 1.5 V/ns 3
Table 7-20. Serial VID Interface (SVID) DC Specifications (Sheet 2 of 2)
Symbol Parameter Min Typ Max Units Notes