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Si53xx-RM
Rev. 0.5 35
Output Drive
Current (CMOS driv-
ing into CKO
VOL
for
output low or CKO-
VOH
for output high.
CKOUT+ and
CKOUT- shorted
externally)
CKO
IO
CMOS
Driving into CKO-
VOL
for output low
or CKO
VOH
for out-
put high. CKOUT+
and CKOUT–
shorted externally.
V
DD
=1.8V
ICMOS[1:0] = 11
—7.5— mA
ICMOS[1:0] = 10
—5.5— mA
ICMOS[1:0] = 01
—3.5— mA
ICMOS[1:0] = 00
—1.75— mA
V
DD
=3.3V — 32 — mA
ICMOS[1:0] = 11
—32—mA
ICMOS[1:0] = 10
—24—mA
ICMOS[1:0] = 01
—16—mA
ICMOS[1:0] = 00
—8—mA
2-Level LVCMOS Input Pins
Input Voltage Low V
IL
V
DD
=1.71V
——0.5 V
V
DD
=2.25V
——0.7 V
V
DD
=2.97V
——0.8 V
Input Voltage High V
IH
V
DD
=1.89V
1.4 — — V
V
DD
=2.25V
1.8 — — V
V
DD
=3.63V
2.5 — — V
3-Level Input Pins
Input Voltage Low V
ILL
— — 0.15 x
V
DD
V
Input Voltage Mid V
IMM
0.45 x
V
DD
—0.55x
V
DD
V
Input Voltage High V
IHH
0.85 x
V
DD
—— V
Input Low Current I
ILL
See note
2
–20 — — µA
Table 4. DC Characteristics (Continued)
Parameter Symbol Test Condition
Si5316
Si5322
Si5324
Si5325
Si5365
Si5366
Si5367
Si5368
Min Typ Max Units
Notes:
1. Refer to Section 6.7.1 and 8.2.1 for restrictions on output formats for TQFP devices at 3.3 V.
2. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 55 on page 115.
3. No under- or overshoot is allowed.