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S1F76300 Series
4–6 EPSON S1F70000 Series
Technical Manual
S1F76310M1K0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter Symbol Condition
Rating
Unit
Min. Typ. Max.
Input voltage
V
I1
VO > VI2
0.9 — 2.0 V
VI2 0.9 — 2.0 V
Output voltage VO Vl1 = 1.5V 3.40 3.50 3.60 V
Detection voltage VDET 1.00 1.05 1.10 V
Detection voltage hysteresis ratio ∆VDET —5—%
Operating current IDDO VI1 = 1.5V, IO = 1.0mA — 8 40 µA
Standby current IDDS VI1 = 1.5V — 3 10 µA
Switching transistor ON resistance R
SWON
VI1 = 1.5V, VO = 3.5V,
—612Ω
VSW = 0.2V
Switching transistor leakage current I
SWQ
VI1 = 1.5V, VO = 1.5V,
— — 0.5 µA
VSW = 7.0V
Backup switch ON resistance R
BSON
VI1 = 1.0V, VI2 = 2.0V,
— 70 160 Ω
IO = 1.0mA
Backup switching leakage current I
BSQ
VI1 = 1.0V, VO = 3.5V,
— — 0.1 µA
VI2 = 2.0V
RST Low-level output current IOL VI1 = 0.9V, VDS = 0.2V 0.05 0.15 — mA
PS pullup current IIH VI1 = 1.5V — — 0.5 µA
Multiplication clock frequency
fCLK VI1 = 1.5V 30 40 50 kHz
S1F76310M1A0
VSS = 0V, Ta = 25 ˚C unless otherwise noted
Parameter Symbol Condition
Rating
Unit
Min. Typ. Max.
Input voltage
V
I1
VO > VI2
0.9 — 2.0 V
VI2 0.9 — 2.0 V
Output voltage VO Vl1 = 1.5V 4.80 5.00 5.20 V
Detection voltage VDET 1.00 1.05 1.10 V
Detection voltage hysteresis ratio ∆VDET —5—%
Operating current IDDO VI1 = 1.5V, IO = 1.0mA — 10 50 µA
Standby current IDDS VI1 = 1.5V — 3 10 µA
Switching transistor ON resistance R
SWON
VI1 = 1.5V, VO = 5.0V,
—510Ω
VSW = 0.2V
Switching transistor leakage current I
SWQ
VI1 = 1.5V, VO = 1.5V,
— — 0.5 µA
VSW = 7.0V
Backup switch ON resistance R
BSON
VI1 = 1.0V, VI2 = 3.0V,
— 50 100 Ω
IO = 1.0mA
Backup switching leakage current I
BSQ
VI1 = 1.0V, VO = 5.0V,
— — 0.1 µA
VI2 = 3.0V
RST Low-level output current IOL VI1 = 0.9V, VDS = 0.2V 0.05 0.15 — mA
PS pullup current IIH VI1 = 1.5V — — 0.5 µA
Multiplication clock frequency
fCLK VI1 = 1.5V 35 45 55 kHz