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Rev.2.00 Nov 28, 2005 page 332 of 378
REJ09B0124-0200
M16C/6N Group (M16C/6NK, M16C/6NM) 22. Electric Characteristics (T/V-ver.)
Under development
This document is under development and its contents are subject to change.
Table 22.50 Electrical Characteristics (2)
(1)
Flash Memory f(BCLK) = 20MHz,
PLL operation,
No division
On-chip oscillation,
No division
Flash Memory f(BCLK) = 10MHz,
Program VCC = 5V
Flash Memory f(BCLK) = 10MHz,
Erase VCC = 5V
Flash Memory f(BCLK) = 32kHz,
Low power dissipation
mode, RAM
(2)
f(BCLK) = 32kHz,
Low power dissipation
mode,
Flash memory
(2)
Mask ROM On-chip oscillation,
Flash Memory Wait mode
f(BCLK) = 32kHz,
Wait mode (3),
Oscillation capacity High
f(BCLK) = 32kHz,
Wait mode (3),
Oscillation capacity Low
Stop mode,
Topr = 25°C
NOTES:
1. Referenced to VCC = 4.2 to 5.5V, VSS = 0V at Topr = –40 to 85°C, f(BCLK) = 20MHz unless otherwise specified.
2. This indicates the memory in which the program to be executed exists.
3. With one timer operated using fC32.
21
1.8
15
25
25
420
50
8.5
3.0
0.8
Power Supply
Current
(VCC
= 4.2 to 5.5V)
ICC
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
Measuring Condition
Standard
Min.
Unit
36
3.0
ParameterSymbol
Output pins are open
and other pins are VSS.
Typ.
Max.