Samsung KFN8GH6Q4M Computer Drive User Manual


 
Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
- 114 -
FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
5.9 AC Characteristics for Load/Program/Erase Performance
See Timing Diagrams 6.9, 6.10, 6.11, 6.12, 6.13 and 6.14
NOTE :
1) These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
5.10 AC Characteristics for INT Auto Mode
See Timing Diagram 6.22
Parameter Symbol Min Typ Max Unit
Sector Load time(Note 1) tRD1
SLC
-2575s
MLC
30 100 s
Page Load time(Note 1) tRD2
SLC
- 45 400 s
MLC
- 50 420 s
Page Program time(Note 1) tPGM2
SLC
- 240 770 s
MLC
1000 5000 s
OTP Access Time(Note 1) tOTP
- 500 700 ns
Lock/Unlock/Lock-tight(Note 1) tLOCK
- 500 700 ns
All Block Unlock Time(Note 1) tABU
-23s
Erase Suspend Time(Note 1) tESP
- 400 500 s
Erase Resume Time(Note 1) tERS1
-0.511ms
Number of Partial Program Cycles in the page (Including main and
spare area)
NOP
SLC
- - 1 cycles
MLC
- - 1 cycles
Block Erase time (Note 1) tBERS1
-0.511ms
Parameter Symbol
Min Max
Unit
Command Input to INT Low
tWB
- 200 ns