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PRELIMINARY
iv
PRELIMINARY
If you are looking for in-
formation about:
Turn to these locations:
Over-erasure (depletion) and
recovery
Section 1.1,
Basic Concepts of Flash Memory
Technology
Section 2.7,
Recovering From Over-Erasure
(Flash-Write Operation)
Section 3.4,
Flash-Write Algorithm
Programming the flash array Section 1.1,
Basic Concepts of Flash Memory
Technology
Section 2.1,
Modifying the Contents of the
TMS320F20x/F24x Flash Array
Section 2.5,
Program Operation
Section 3.2,
Programming Algorithm
Sample code Appendix A,
Assembly Source Listings and
Program Examples
Notational Conventions
This document uses the following conventions.
- The flash EEPROM is referred to as flash memory or the flash module.
The term flash array refers to the actual memory array within the flash
module. The flash module includes the flash memory array and the associ-
ated control circuitry.
- The DSP generation and devices are abbreviated as follows:
J TMS320F20x/24x generation: ’F20x/24x
J TMS320F20x devices: ’F20x
J TMS320F24x devices: ’F24x
- Program listings and code examples are shown in a special type-
face.
Here is a sample program listing:
0011 0005 0001 .field 1, 2
0012 0005 0003 .field 3, 4
0013 0005 0006 .field 6, 3
0014 0006 .even