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MuxOneNAND2G(KFM2G16Q2A-DEBx)
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MuxOneNAND4G(KFN4G16Q2A-DEBx)
4.3 DC Characteristics
NOTE :
1) CE
should be VIH for RDY. IOBE should be ‘0’ for INT.
2) I
CC
active for Host access
3) I
CC
active for Internal operation. (without host access)
4) Vccq is equivalent to Vcc-IO
Parameter Symbol Test Conditions
RMS Value
Unit
Min Typ Max
Input Leakage Current I
LI VIN=VSS to VCC, VCC=VCCmax
Single
- 1.0 - + 1.0
A
DDP
- 2.0 - + 2.0
Output Leakage Current I
LO
VOUT=VSS to VCC, VCC=VCCmax,
CE
or OE=VIH(Note 1)
Single
- 1.0 - + 1.0
A
DDP
- 2.0 + 2.0
Active Asynchronous Read Current
(Note 2)
I
CC1 CE=VIL, OE=VIH -815mA
Active Burst Read Current (Note 2) I
CC2R CE=VIL, OE=VIH, WE=VIH
66MHz - 20 30 mA
83MHz - 25 35 mA
1MHz - 3 4 mA
66MHz
(DDP)
-3038mA
83MHz
(DDP)
-3545mA
1MHz
(DDP)
-34mA
Active Burst Write Current (Note 2) I
CC2W CE=VIL, OE=VIH, WE=VIL
66MHz - 20 30 mA
83MHz - 25 35 mA
1MHz - 3 4 mA
66MHz
(DDP)
-3038mA
83MHz
(DDP)
-3545mA
1MHz
(DDP)
-34mA
Active Asynchronous Write Current
(Note 2)
I
CC3 CE=VIL, OE=VIH
Single - 8 15 mA
DDP - 17 25 mA
Active Load Current (Note 3) I
CC4 CE=VIL, OE=VIH, WE=VIH -3040mA
Active Program Current (Note 3) I
CC5 CE=VIL, OE=VIH, WE=VIH -2535mA
Active Erase Current (Note 3) I
CC6 CE=VIL, OE=VIH, WE=VIH -2030mA
Multi Block Erase Current (Note 3) I
CC7 CE=VIL, OE=VIH, WE=VIH, 64blocks - 20 30 mA
Standby Current I
SB CE= RP=VCC 0.2V
Single - 10 50
A
DDP - 20 100
Input Low Voltage V
IL --0.5-0.4V
Input High Voltage (Note 4) V
IH -
V
CCq-
0.4
-
V
CCq+0.
4
V
Output Low Voltage V
OL IOL = 100 A ,VCC=VCCmin , VCCq=VCCqmin --0.2V
Output High Voltage V
OH IOH = -100 A , VCC=VCCmin , VCCq=VCCqmin
V
CCq-
0.1
--V