Samsung KFN4G16Q2A Computer Drive User Manual


 
MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Case 2 : BL=8 word synchronous burst block read
1st burst data Nth burst data
Start Page
Address Setting
Number of
Pages
Synchronous Burst
Block Read Command
ADQ0~
CE
CLK
RDY
High-Z
INT bit : Indicator for DataRAM’s Status (Ready=1, Busy=0)
RDY: Indicator for Latency of Sync Burst Block Read
Burst Length: 4, 8, 16, 32, 1K Word Synchronous Burst Block Read are available.
A1-1 ~ A1-N: Address where each burst data initiates, and this may differ for different settings of BSA and BL.
N can be calculated by 1024w / BL.
Therefore, for above case, BSA=0200h and BL=8word. So that N=128, A1-1=0200h, A1-2=0208h ... A1-128=05F8h.
WE
must be set high throughout the operation.
ADQ15
F241h A1-1 A1-128
INT bit
........
..
..
..
..
..
WE
OE
AVD
High
High
..
..
..
......
......
......
......
......
DQ[15] polling
F241h
DQ[15] polling
F241h
DQ[15] polling
.
High-Z
High