Samsung KFN4G16Q2A Computer Drive User Manual


 
MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
1.4 Product Features
Device Architecture
Design Technology:
Supply Voltage:
Host Interface:
5KB Internal BufferRAM:
SLC NAND Array:
Device Performance
Host Interface Type:
Programmable Burst Read Latency:
Multiple Sector Read/Write:
Multiple Reset Modes:
Multi Block Erase:
Low Power Dissipation:
Reliability
System Hardware
Voltage detector generating internal reset signal from Vcc
Hardware reset input (RP
)
Data Protection Modes
User-controlled One Time Programmable(OTP) area
Internal 2bit EDC / 1bit ECC
Internal Bootloader supports Booting Solution in system
Handshaking Feature
Detailed chip information
Packaging
2G products
4G DDP products
A die
1.8V (1.7V ~ 1.95V)
16 bit
1KB BootRAM, 4KB DataRAM
(2K+64)B Page Size, (128K+4K)B Block Size
Synchronous Burst Read
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K words Sequential Burst
Synchronous Burst Block Read
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with no-wrap
- Continuous (1K words) 64 Page Sequential Burst
Synchronous Write
- Up to 83MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-, 1K-words with wrap around
- Continuous 1K words Sequential Burst
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
1~40Mhz : Latency 3 available
1~66Mhz : Latency 4,5,6 and 7 available
Over 66Mhz : Latency 6,7 available.
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Resets
up to 64 Blocks
Typical Power,
- Standby current : 10uA (Single)
- Synchronous Burst Read current(66MHz/83MHz, single) : 20/25mA
- Synchronous Burst Write current(66MHz/83MHz, single) : 20/25mA
- Load current : 30mA
- Program current : 25mA
- Erase current : 20mA
- Multi Block Erase current : 20mA
- Data retention 10year after 10K Program/Erase Cycles
- Data retention 1year after 100K Program/Erase Cycles
- Write Protection for BootRAM
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- INT pin indicates Ready / Busy
- Polling the interrupt register status bit
- by ID register
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
63ball, 10mm x 13mm x max 1.2mmt , 0.8mm ball pitch FBGA