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Rev. 1.00, 05/04, page 527 of 544
22.5 Flash Memory Characteristics
Table 22.12 shows the flash memory characteristics.
Table 22.12 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, V
SS
= 0 V, T
a
= –20 to +75°C
Item Symbol Min. Typ. Max. Unit
Test
Condition
Programming time*
1
, *
2
,*
4
t
P
— 10 200 ms/
128
bytes
Erase time*
1
, *
3
,*
6
t
E
— 100 1200 ms/
block
Reprogramming count N
WEC
— — 100 times
Wait time after
SWE-bit setting*
1
x 1 — — µs
Wait time after
PSU-bit setting*
1
y 50 — — µs
z1 28 30 32 µs 1 ≤ n ≤ 6
z2 198 200 202 µs 7 ≤ n ≤ 1000
Wait time after
P-bit setting*
1
, *
4
z3 8 10 12 µs Additional
write
Wait time after
P-bit clear*
1
α 5 — — µs
Wait time after
PSU-bit clear*
1
β 5 — — µs
Wait time after
PV-bit setting*
1
γ 4 — — µs
Wait time after
dummy write*
1
ε 2 — — µs
Wait time after
PV-bit clear*
1
η 2 — — µs
Wait time after
SWE-bit clear*
1
θ 100 — — µs
Programming
Maximum
programming
count*
1
, *
4
,*
5
N — — 1000 times