Filter
Top Products
35
CHAPTER 1 OUTLINE (
µ
PD78058F SUBSERIES)
1.1 Features
Compared to the conventional
µ
PD78054 Subseries, EMI (Electro Magnetic Interference) noise has been
reduced.
On-chip high-capacity ROM and RAM
Program Memory
(ROM)
Part Number
Item
µ
PD78056F
µ
PD78058F
µ
PD78P058F
48 Kbytes
60 Kbytes
60 Kbytes
Note 1
Internal High-Speed RAM Internal Buffer RAM Internal Expansion RAM
1024 bytes 32 bytes None
1024 bytes
1024 bytes
Note 1
1024 bytes
Note 2
Data Memory
Notes 1. The capacities of internal PROM and internal high-speed RAM can be changed by means of the
memory size switching register (IMS).
2. The capacity of internal expansion RAM can be changed by means of the internal expansion RAM
size switching register (IXS).
External Memory Expansion Space: 64 Kbytes
Minimum instruction execution time changeable from high speed (0.4
µ
s: In main system clock 5.0 MHz operation)
to ultra-low speed (122
µ
s: In subsystem clock 32.768-kHz operation)
Instruction set suited to system control
• Bit manipulation possible in all address spaces
• Multiply and divide instructions
69 I/O ports: (4 N-ch open-drain ports)
8-bit resolution A/D converter: 8 channels
8-bit resolution D/A converter: 2 channels
Serial interface: 3 channels
• 3-wire serial I/O/SBI/2-wire serial I/O mode: 1 channel
• 3-wire serial I/O mode (Automatic transmit/receive function): 1 channel
• 3-wire serial I/O/UART mode: 1 channel
Timer: 5 channels
• 16-bit timer/event counter : 1 channel
• 8-bit timer/event counter : 2 channels
• Watch timer : 1 channel
• Watchdog timer : 1 channel
22 vectored interrupt sources
Two test inputs
Two types of on-chip clock oscillators (main system clock and subsystem clock)
Supply voltage: VDD = 2.7 to 6.0 V