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CHAPTER 2 OUTLINE (
µ
PD78058FY SUBSERIES)
2.1 Features
Compared to the conventional
µ
PD78054Y Subseries, EMI (Electro Magnetic Interference) noise has been
reduced.
On-chip high-capacity ROM and RAM
Notes 1. The capacities of internal PROM and internal high-speed RAM can be changed by means of the
memory size switching register (IMS).
2. The capacity of internal expansion RAM can be changed by means of the internal expansion RAM
size switching register (IXS).
External Memory Expansion Space: 64 Kbytes
Minimum instruction execution time changeable from high speed (0.4
µ
s: In main system clock 5.0 MHz operation)
to ultra-low speed (122
µ
s: In subsystem clock 32.768 kHz operation)
Instruction set suited to system control
• Bit manipulation possible in all address spaces
• Multiply and divide instructions
I/O ports: 69 (N-ch open-drain ports: 4)
8-bit resolution A/D converter: 8 channels
8-bit resolution D/A converter: 2 channels
Serial interface: 3 channels
• 3-wire serial I/O/2-wire serial I/O/I
2
C bus mode: 1 channel
• 3-wire serial I/O mode (Automatic transmit/receive function): 1 channel
• 3-wire serial I/O/UART mode: 1 channel
Timer: 5 channels
• 16-bit timer/event counter : 1 channel
• 8-bit timer/event counter : 2 channels
• Watch timer : 1 channel
• Watchdog timer : 1 channel
22 vectored interrupts
Two test inputs
Two types of on-chip clock oscillators (main system clock and subsystem clock)
Supply voltage: VDD = 2.7 to 6.0 V
Program Memory
(ROM)
Data Memory
Part Number
Item
µ
PD78056FY
µ
PD78058FY
µ
PD78P058FY
48 Kbytes
60 Kbytes
60 Kbytes
Note 1
1024 bytes 32 bytes None
1024 bytes
1024 bytes
Note 1
1024 byes
Note 2
Internal High-Speed RAM Internal Buffer RAM Internal Expansion RAM