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APPENDIX A <REFERENCE> EXTERNAL DEVICE INTERFACE TIMINGS
A-96 EPSON S1C33210 PRODUCT PART
A.2 DRAM (60ns)
DRAM interface setup examples – 60ns
Operating
frequency
RAS precharge
cycle
RAS cycle CAS cycle
Refresh RAS pulse
width
Refresh RPC delay
20MHz11221
25MHz21221
33MHz22231
DRAM interface timing – 60ns
DRAM interface Unit: ns 33MHz 25MHz 20MHz
Parameter Symbol Min. Max. Cycle Time Cycle Time Cycle Time
<Common parameters>
Random read/random write cycle time tRC 110 – 6 180 5 200 4 200
#RAS precharge time tRP 40 – 260 280 150
#RAS pulse width tRAS 60 10000 4 120 3 120 3 150
#CAS pulse width tCAS 15 10000 1.5 45 1.5 60 1.5 75
Row address setup time tASR 0 – 0.5 15 0.5 20 0.5 25
Row address hold time tRAH 10 – 1.5 45 0.5 20 0.5 25
Column address setup time tASC 0 – 0.5 15 0.5 20 0.5 25
#RAS→#CAS delay time tRCD 20 – 2.0 60 1.0 40 1.0 50
#RAS→column address delay time tRAD 15 – 1.5 45 0.5 20 0.5 25
<Read-cycle parameters>
#RAS access time tRAC – 60 3.5 105 2.5 100 2.5 125
#CAS access time tCAC – 15 1.5 45 1.5 60 1.5 75
Address access time tAA – 30 2.0 60 2.0 80 2.0 100
#OE access time tOAC – 15 3.5 105 2.5 100 2.5 125
Output buffer turn-off time tOFF 0 15 2 60 2 80 1 50
<Write-cycle parameters>
Data input hold time tDH 10 – 1.5 45 1.5 60 1.5 75
<Fast-page mode>
Fast-page mode cycle time tPC 40 – 2.0 60 2.0 80 2.0 100
Fast-page mode #CAS precharge time tCP 10 – 0.5 15 0.5 20 0.5 25
Access time after #CAS precharge tACP – 35 2.0 60 2.0 80 2.0 100
<Refresh cycle>
#CAS setup time tCSR 10 – 1.0 30 1.0 40 1.0 50
#CAS hold time tCHR 10 – 2.5 75 1.5 60 1.5 75
#RAS precharge→#CAS hold time tPPC 10 – 1.0 30 1.0 40 1.0 50
#RAS pulse width (only in refresh cycle) tRAS 60 10000 3.0 90 2.0 80 2.0 100