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8 ELECTRICAL CHARACTERISTICS
A-70 EPSON S1C33210 PRODUCT PART
8.3 DC Characteristics
(Unless otherwise specified: VDD=2.7V to 3.6V, Ta=-40°C to +85°C)
Item Symbol Condition Min. Typ. Max. Unit ∗
Input leakage current ILI -1 – 1 µA
Off-state leakage current IOZ -1 – 1 µA
High-level output voltage VOH IOH=-2mA (Type1), IOH=-6mA (Type2),
I
OH=-12mA (Type3), VDD=Min.
VDD
-0.4
––V
Low-level output voltage VOL IOL=2mA (Type1), IOL=6mA (Type2),
I
OL=12mA (Type3), VDD=Min.
––0.4V
High-level input voltage VIH CMOS level, VDD=Max. 2.4 – – V
Low-level input voltage VIL CMOS level, VDD=Min. ––0.4V
Positive trigger input voltage VT+ LVTTL schmitt 1.1 – 2.4 V
Negative trigger input voltage VT- LVTTL schmitt 0.6 – 1.8 V
Hysteresis voltage VH LVTTL schmitt 0.1 – – V
Pull-up resistor RPU VI=0V Other than DSIO 80 200 480 kΩ
DSIO 40 100 240 kΩ
Pull-down resistor RPD VI=VDD (TST) 40 100 240 kΩ
Input pin capacitance CI f=1MHz, VDD=0V – – 10 pF
Output pin capacitance CO f=1MHz, VDD=0V – – 10 pF
I/O pin capacitance CIO f=1MHz, VDD=0V – – 10 pF
Note:See Appendix B for pin characteristics.