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ELECTRICAL DATA S3C2440A RISC MICROPROCESSOR
27-4
Normal I/O PAD DC Electrical Characteristics for Memory (V
DDMOP
=3.0V±
±±
±0.3V, 3.3V ±
±±
± 0.3V, T
A
=-40 to 85 °
°°
°C)
Symbol Parameters Condition Min Typ. Max Unit
High level input voltage
V
IH
LVCMOS interface 2.0
V
Low level input voltage
V
IL
LVCMOS interface 0.8
V
VT Switching threshold 0.5V
DD
V
VT+ Schmitt trigger, positive-going threshold CMOS 2.0 V
VT- Schmitt trigger, negative-going threshold CMOS 0.8 V
High level input current
I
IH
Input buffer
V
IN
= V
DD
-10 10
µA
Low level input current
Input buffer
V
IN
= V
SS
-10 10
I
IL
Input buffer with pull-up -60 -33 -10
µA
High level output voltage
Type B4 to B12
I
OH
= - 1 µA V
DD
-0.05
Type B4
I
OH
= - 4 mA
Type B6
I
OH
= - 6 mA
Type B8
I
OH
= - 8 mA
Type B10
I
OH
= -10 mA
V
OH
Type B12
I
OH
= -12 mA
2.4
V
Low level output voltage
Type B4 to B12
I
OL
= 1 µA
0.05
Type B4
I
OL
= 4 mA
Type B6
I
OL
= 6 mA
Type B8
I
OL
= 8 mA
Type B10
I
OL
= 10 mA
V
OL
Type B12
I
OL
= 12 mA
0.4
V
NOTES:
1. Type B6 means 6mA output driver cell.
2. Type B8 means 8mA output driver cell.
3. Type B12 means 12mA output driver cells.