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SILICON GATE MOS 8708/8704
A.C. Characteristics
TA
=
O°C
to
70°C, Vee =+SV
±S%,
Vo
o
=
+12V
±S%,
Vee =
-SV
±S%,
Vss =
OV,
Unless Otherwise Noted.
Symbol
Parameter
Min.
Typ.
Max. Unit
tAce
Address
to
Output
Delay 280 4S0
ns
teo
Chip Select
to
Output
Delay
120
ns
tOF
Chip De-Select
to
Output
Float
0
120
ns
tOH
Address
to
Output
Hold
0
ns
Capacitance£1]
TA
=
2SoC,
f = 1MHz
Symbol
Parameter Typ.
Max. Unit
Conditions
CIN
I
nput
Capacitance
4
6
pF
VIN=OV
COUT
Output
Capacitance
8 12
pF
VOUT=QV
Note 1. This parameter
is
periodically sampled and
not
100% tested.
A.C.
Test Conditions:
Output
Load: 1
TTL
gate
and
CL
= 100pF
Input
Rise
and
Fall Times:
~20ns
Timing Measurement Reference Levels:
0.8V
and 2.8V
for
inputs; 0.8V
and
2.4V
for
outputs
Input
Pulse
Levels:
O.6SV
to
3.0V
Waveforms
ADDRESS
----X--------------......J'IX,.,--------
C.S./WE
I 1
I
I~
tOH-----'1
i
~'--------------......."A
i
I I.---
teo
---'1
I 1
~tDF---.1
14-11
----
t
ACC
_I
1
5-47