Filter
Top Products
SILICON GATE MOS
8255
D.C. CHARACTERISTICS TA =
o°c
to
70°C; Vee = +5V ±5%;
vss
=
OV
Symbol
Parameter
Min.
Typ.
Max.
Unit Test Conditions
Vil
Input
Low Voltage
.8
V
V
IH
Input
High Voltage 2.0
V
Val
Output
Low Voltage
.4
V
IOl
= 1.6mA
VOH
Output
High Voltage
2.4
V
IOH
= -50JlA (-1
OOJlA
for
D.B. Port)
IOH[1]
Darlington Drive Current 2.0
rnA
VOH=1.5V,
REXT=390n
Ice
Power Supply Current 40
rnA
NOTE:
1.
Available
on
8
pins
only.
A.C. CHARACTERISTICS
TA
=
o°c
to
70°C; Vee =
+5V
±6%; Vss =
OV
Symbol Parameter
Min.
Typ.
Max.
Unit
Test Condition
twP
Pulse
Width
of
WR
430
ns
tow
Time D.B. Stable Before
WR
10
ns
two
Time D.B. Stable
After
WR
65
ns
tAW
Time Address Stable Before
WR
20
ns
tWA
Time Address Stable
After
WR
35
ns
tew
Time
CS
Stable Before
WR
20
ns
twe
Time
CS
Stable
After
WR
35
ns
tWB
Delay From
WR
To
Output
500
ns
tRP
Pulse
Width
of
RD
430
ns
-
50
tlR
RD
Set-Up Time
ns
tHR
Input
Hold Time
50
ns
tRO
Delay From
RD
= 0
To
System
Bus
350
ns
too
Delay From
RD
= 1
To
System
Bus
150
ns
tAR
Time Address Stable Before
RD
50
ns
teR
Time
CS
Stable Before
RD
50
ns
tAK
Width
Of
ACK
Pulse
500
ns
tST
Width
Of
STB
Pulse
350
ns
tps
Set-Up Time For Peripheral
150
ns
tpH
Hold Time
For
Peripheral
150
ns
tRA
Hold
Time
for
A1, Ao
After
RD
= 1
379
ns
'IRe
Hold Time For
CS
After
RD
= 1
5
ns
tAD
Time
From
ACK
= 0
To
Output(Mode
2)
500
ns
tKO
Time From
ACK
= 1
To
Output
Floating
300
ns
two
Time From
WR
= 1
To
OBF = 0
300
ns
tAO
Time From ACK = 0
To
OBF = 1
500
ns
-
600
tSI
Time From STB = 0
To
IBF
ns
tRI
Time
From
RD
= 1
To
IBF = 0
300
ns
5-130