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SILICON GATE MOS
8302
Typical Characteristics
100
CURRENT
VS. TEMPERATURE
ACCESS
TIME
VS.
LOAD CAPACITANCE
OUTPUT
SINK
CURRENT
VS. OUTPUT
VOLTAGE
I
\
vee
= +5V
-
~
v
oo
=
-9V
-
\
\
v
GG
=
-9V
"
INPUTS:: Vee
-
~
\
I"
OUTPUTS ARE
OPEN
I I I
'\
~
I
l'
NSIIV
ee
."
'"
"l
CS=
0.0V'
I
I
+1
+2
+3
+4
Ci
I---+---+--.!
12.0
~
z
au
t----+---+--
~
10.0
::)
CJ
~
8.0
en
t----+---+--
~
6.0~--+-~T---+-----t
e
:;)
t----+---+--
0
-4
-3
-2
-1
'-
1
TTL
LOAD
t--
V
cc
=+5V
I----
V
OO
=
-9V
VGG
::
-9V
I--
T
A
::I
250C
r----
I I I
900
800
700
!
600
w
~
500
~
~
400
au
u
u
300
4(
200
100
o
o
10
20 30 40 50 60 70 80
90
100
LOAD CAPACITANCE
(pF)
80 100 12060
40
20
o
39
38
37
36
35
i
34
~
33
z
au
II:
32
II:
j
u
31
0
_0
30
29
28
27
AMBIENT TEMPERATURE
(OC)
OUTPUT VOLTAGE (VOL
TSI
ACCESS
TIME
VS.
TEMPERATURE
OUTPUT CURRENT VS.
VOOSUPPLY
VOLTAGE
OUTPUT CURRENT VS.
TEMPERATURE
I
I I
~
vee·
+5V
~~
v
oo
•
-9V
v
GG
•
-9V
~~
VOL·
+.45V-
I--
cs
..
o.~
~
r--......
I
0 10
2030
k
5060
70 80
90
I
AiBIENT
TEMPERATURE
t"CI
Vee"
+5V
V
oo
•
-9V
-
-V
GG
-
-9V
V
OH
"
O.OV
~
~
I--
~
~rr
-
---
;{
.!
~
z
au
a:
a:
::)
u
~
z
en
~
::)
~
~
:J
0
j
_0
Ci
0
!
~
z
w
II:
a:
::)
U
au
CJ
-3
a:
::)
S
~
::)
~
~
:J
0
x
_0
-4
I I
V
cc
::
+5V
"""
VGG
=
-9V
""'""
VOL
::
+.45V/
_ T
A
=.250C
-
- Specified
Operating
Range
_
r--_
I I
n(
I
,
-5
-6
-7
-8
-9
-10
V
DO
SUPPL
Y VOLTAGE (V)
i--
I I
V
CC
::I
+5V
V
GG
::
-9V
V
OH
::I
O.OV
T
A
'"
25°C
,,~
;{
!
~
z
-3
w
II:
II:
:;)
U
w
U
II:
:J
0-3.5
en
I-
:J
~
I-
:J
o
%
.9-4
10
20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (OC)
~
I--
-
1
TTL
LOAD~20
pf-
Vcc
II +5V
-
V
DO
..
-9V
VGG
=
-9V
-
I I
900
800
700
.:
600
w
~
500
~
~
400
w
u
u
300
4(
200
100
AVERAGE
CURRENT VS.
DUTY
CYCLE FOR CLOCKED VGG
45
40
1
001
35
C
30
.!
0
26
_0
au
CJ
20
4(
a:
w
15
>
4(
10
1000
5
I
I
I
I
I
CLOCKED V
GG
::
-9V
V
DD
..
-9V
~
----
CS
::
V
1H
~
T
A
..
25°C
~
~-
---
~
~
.---
~
~
~
--~
~~
~
~
---
o
o 10 20
30
40
50 60
DUTY CYCLE (%)
70 80
90
100
5-54